AlGaN Semiconductor Electrode Structure for Leakage Suppression
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving improved characteristics such as stable operation, low off-resistance, and effective suppression of leakage current.
Innovation Solution
The semiconductor device incorporates a specific configuration including Al x1 Ga 1-x1 N and Al x2 Ga 1-x2 N semiconductor members, insulating members, and a unique electrode structure to control current flow and suppress leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a blue light LED with wavelength of 470 nm or less is used, then the color temperature increases and the color shifts toward blue, but the chip emits excess energy in the violet region (380 nm to 450 nm) which causes aging and yellowing of the resin
Solution Approach 1:
A cut-off filter member is introduced as an intermediary between the blue light LED and the resin. This filter member selectively transmits blue light wavelengths while blocking violet light wavelengths, thereby protecting the resin from violet-induced aging while maintaining the desired blue color temperature
Solution Approach 2:
The patent changes the optical parameter parameters of the system by introducing a filter with specific transmission characteristics. The cut-off filter member is designed to transmit wavelengths of 450 nm or more while blocking shorter wavelengths, thereby modifying the spectral distribution reaching the resin
2Illumination intensity
If a yellow phosphor is used to down-convert blue light to yellow, then the mixture appears white, but the color temperature becomes low and the white light lacks naturalness
Solution Approach 1:
The patent uses a composite phosphor system combining yellow phosphor and cyan phosphor materials. This composite approach allows the yellow phosphor to convert some blue light to yellow while the cyan phosphor converts blue light to cyan, together producing white light with a more natural color temperature than yellow phosphor alone
3Use of energy by moving object
If the full blue spectrum is used for white light generation, then the energy utilization is maximized, but the violet region (380 nm to 450 nm) causes resin aging and yellowing
Solution Approach 1:
The cut-off filter member serves as a mediator that selectively filters the blue spectrum. It allows beneficial blue wavelengths (450 nm and above) to pass through for energy-efficient white light generation while blocking harmful violet wavelengths (below 450 nm) that cause resin degradation
Solution Approach 2:
The patent extracts or removes the harmful violet portion of the blue spectrum using the cut-off filter member. By taking out the problematic 380-450 nm wavelength range while retaining the useful 450 nm and above range, the system maintains energy efficiency while eliminating resin-damaging radiation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables stable operation, low off-resistance, and effective suppression of leakage current, resulting in improved semiconductor device characteristics.
Implementation Method 1
If a yellow phosphor is used to down-convert blue light to yellow
Implementation Method 2
If both a yellow phosphor and a cyan phosphor are used to down-convert blue light
Data Source
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AI summary
According to one embodiment, a semiconductor device includes a first electrode (51), a second electrode (52), a third electrode (53), a first semiconductor member, a second semiconductor member, a first insulating member, and a second insulating member. The first to third electrodes extend along a first direction (D1). The third electrode includes a first electrode portion (53a). The first semiconductor member includes Alx1Ga1-x1N (0 ≤ x1 < 1). The first semiconductor member includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region. The second semiconductor member includes Alx2Ga1-x2N (0 < x2 ≤ 1, x1 < x2). The second semiconductor member includes a first semiconductor portion, a second semiconductor portion and a third semiconductor portion. The first insulating member includes a first insulating portion. The second insulating member includes a first insulating region.