AlGaN GaN HEMT Biosensor for Real-Time Cell Signal Monitoring
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Solution Overview
Problem
Current technologies lack effective systems for monitoring cell signals in response to external stimuli, particularly in real-time, and for understanding radiation-induced effects on cells, which are crucial for advancing radiation biology and biophysics.
Innovation Solution
The development of AlGaN/GaN high electron mobility transistors (HEMTs) that allow for real-time monitoring of cell signals and responses to external stimuli, including radiation, by utilizing their sensitivity to changes in ion concentration and pH, enabling long-term measurements and biocompatibility with living cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional sensors are used to monitor cell signals, then basic measurements can be obtained, but real-time monitoring capability and sensitivity to small signals are insufficient
Solution Approach 1:
The device is divided into multiple discrete areas, each containing a HEMT sensor element. This segmentation allows independent optimization of each sensor region and enables parallel monitoring of multiple cell populations, improving both detection sensitivity and measurement reliability through redundancy
Solution Approach 2:
A biomolecular coating layer is introduced as an intermediary between the HEMT sensor surface and the cells. This coating layer enhances cell attachment and signal transduction while protecting the sensitive transistor structure, thereby improving measurement precision without compromising reliability
2Adaptability or versatility
If cells are attached to HEMT surfaces for monitoring, then cell signal detection is enabled, but the harsh environment during irradiation may affect device performance
Solution Approach 1:
Different regions of the device are designed with distinct properties: the HEMT active areas are optimized for electrical sensitivity and protected from direct irradiation where possible, while the cell attachment surfaces are optimized for biocompatibility. This local differentiation allows the device to maintain both biocompatibility and reliability under irradiation conditions
Solution Approach 2:
The device structure incorporates protective design elements beforehand to cushion against the harsh irradiation environment. The discrete area configuration and biomolecular coatings provide pre-established protection that maintains device stability during irradiation while preserving cell viability and signal detection capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These devices provide stable and repeatable measurements during irradiation, detecting small signals from cells and maintaining sensitivity to pH changes, facilitating insights into radiation-induced signaling pathways and bystander effects, and enabling dosimetry in harsh environments.
Implementation Method 1
the source-drain conductivity of a field effect transistor depends on the electrical field induced by the gate potential
Implementation Method 2
The measurement principle of an ISFET is similar to that of a normal FET. The source-drain conductivity depends on the space charge region, which is generated by a field effect. But instead of an electric contact for the gate there is an ion sensitive layer
Implementation Method 3
Instead of using a pH sensitive layer for ion detection they take advantage of the charge sensitivity of a two dimensional electron gas (2DEG) produced by the different polarisations of the materials
Data Source
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AI summary
The present application relates to semiconductor devices, in particular to a device for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time, comprising (a) at least one discrete area comprising a high electron mobility transistor (HEMT); and (b) non-excitable cells attached to said HEMT (HEMT element) for example, fibroblasts, HEK, CHO cell lines, keratinocytes, etc. Preferably, the HEMT is an AlGaN/GaN FET. Accordingly, the device can be applied in uses and methods for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time. Likewise, the device can be applied for screening compounds that reverse, protect from and/or shield cells from external stimuli which cause damage to cells. Also, kits comprising the device are disclosed.