AlGaN Nitride Layer Structure for Higher Breakdown Voltage
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high punch-through voltage and breakdown voltage due to issues with carbon and oxygen concentrations in nitride regions, leading to potential current leakage and reduced crystallinity.
Innovation Solution
A nitride semiconductor structure is designed with specific carbon and oxygen concentration ratios in distinct nitride regions, including a second nitride region with higher carbon and oxygen concentrations, and a third region with lower oxygen and carbon concentrations, to enhance the punch-through voltage and breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If carbon and oxygen concentrations are increased in nitride regions, then crystallinity is improved, but current leakage increases and breakdown voltage decreases
Solution Approach 1:
The patent applies local quality by creating distinct nitride regions with different carbon and oxygen concentration profiles. Specifically, a first nitride region has a first carbon concentration and first oxygen concentration, while a second nitride region has a second carbon concentration and second oxygen concentration, where the ratio of second oxygen concentration to second carbon concentration differs from the ratio of first oxygen concentration to first carbon concentration. This allows each region to be optimized for its specific function: one region for crystallinity and another for voltage blocking.
Solution Approach 2:
The patent segments the nitride semiconductor structure into multiple nitride regions with different compositional characteristics. By dividing the nitride layer into at least two distinct regions with different carbon and oxygen concentration ratios, the structure can simultaneously achieve good crystallinity in one region while maintaining high breakdown voltage in another region, thus resolving the contradiction between these two properties.
2Strength
If aluminum composition ratio is increased in nitride regions, then bandgap is widened for higher voltage, but manufacturing complexity increases
Solution Approach 1:
The patent employs parameter changes by systematically varying the aluminum composition ratio across different nitride regions. The first nitride region has a first aluminum composition ratio while the second nitride region has a second aluminum composition ratio. By changing this compositional parameter spatially, the patent achieves different bandgap energies in different regions, enabling high voltage operation while managing manufacturing complexity through controlled compositional gradients.
Data Source
AI summary
According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N, a second nitride region including Alx2Ga1-x2N, and a third nitride region including Alx3Ga1-x3N. The second nitride region is provided between the first and third nitride regions in a first direction from the first nitride region to the second nitride region. The second nitride region includes carbon and oxygen. The first nitride region does not include carbon, or a second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region. The second carbon concentration is higher than a third carbon concentration in the third nitride region. A ratio of a second oxygen concentration in the second nitride region to the second carbon concentration is not less than 1.0×10−4 and not more than 1.4×10−3.