AlGaN Nitride Layer Structure for Low-Resistance Gate Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices, such as transistors, face challenges in improving characteristics like ON-resistance and gate reliability due to limitations in nitride member composition and electrode configurations.
Innovation Solution
A semiconductor device design incorporating nitride members with varying AlGaN composition ratios and electrode configurations, including a step structure in the nitride member and specific electrode positioning, to control current flow and reduce gate leakage, thereby achieving low ON-resistance and high gate reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional nitride member structure is used, then the device structure is simple, but the ON-resistance is high and gate reliability is poor
Solution Approach 1:
The nitride member is divided into multiple distinct layers: a first nitride layer with higher Al composition ratio and a second nitride layer with lower Al composition ratio. This segmentation allows each layer to perform different functions - the first layer provides barrier properties to suppress gate leakage, while the second layer provides conductive properties to reduce ON-resistance, thereby resolving the contradiction between reliability and structural simplicity.
Solution Approach 2:
Different regions of the nitride member are given different local properties through varying Al composition ratios. The first nitride layer positioned near the gate electrode has higher Al content for better leakage suppression, while the second nitride layer has lower Al content for better conductivity. This local quality differentiation enables simultaneous optimization of gate reliability and ON-resistance without excessive structural complexity.
2Reliability
If the nitride member has uniform composition, then the manufacturing process is simple, but it cannot simultaneously achieve low ON-resistance and low gate leakage
Solution Approach 1:
The nitride member is segmented into layers with different Al composition ratios that can be controlled within specific ranges (first layer: 0.3≤x1<0.6, second layer: 0.05≤x2<0.3). This segmentation transforms the difficult task of controlling uniform composition into the more manageable task of controlling layer-by-layer composition, enabling simultaneous achievement of low gate leakage and low ON-resistance while maintaining reasonable manufacturing precision requirements.
Solution Approach 2:
The Al composition ratio parameter is changed across different layers of the nitride member. By varying this parameter (x1 for first layer, x2 for second layer) within specified ranges, the patent achieves different electrical properties in different regions, allowing simultaneous optimization of gate reliability and ON-resistance without requiring extreme manufacturing precision.
3Reliability
If a single-layer nitride member is used, then the device structure is simple, but the ON-resistance cannot be sufficiently reduced
Solution Approach 1:
The nitride member is segmented into a first nitride layer and a second nitride layer with different Al composition ratios and thicknesses. The first layer (5nm≤t1<20nm) provides gate leakage suppression, while the second layer (20nm≤t2<50nm) provides low resistance path. This segmentation enables simultaneous achievement of low ON-resistance and high gate reliability with only moderate increase in structural complexity.
Solution Approach 2:
The nitride member is constructed as a composite structure with two different nitride layers having different Al composition ratios. This composite configuration combines the beneficial properties of high-Al-content materials (low leakage) and low-Al-content materials (low resistance) into a single integrated component, achieving performance optimization without excessive structural complexity.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first, second, third nitride members, first, second, third electrodes, and a first insulating member. The first nitride member includes a first face along a first plane, a second face along the first plane, and a third face. The third face is connected with the first and second faces between the first and second faces. The third face crosses the first plane. The first face overlaps a part of the first nitride member. The second nitride member includes a first nitride region provided at the first face. The third nitride member includes a first nitride portion provided at the second face. The first electrode includes a first connecting portion. The second electrode includes a second connecting portion. The third electrode includes a first electrode portion. The first insulating member includes a first insulating region.