AlGaN Semiconductor Layer Structure for Current Collapse Suppression
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Solution Overview
Problem
Semiconductor devices, such as transistors, face challenges in achieving stable characteristics and high electron mobility due to issues with current collapse and on-resistance, which are not adequately addressed by existing technologies.
Innovation Solution
The semiconductor device incorporates a specific structure with a first semiconductor region of Alx1Ga1-x1N, a second semiconductor region of Alx2Ga1-x2N, a first compound region of Al and N without oxygen or with lower oxygen concentration than nitrogen, and a second layer of Al, Si, and O, where the Al concentration in the first compound region is higher than in the third partial region, and the Si concentration in the second intermediate region is lower than Al, with a nitrogen to oxygen ratio between 0.1 and 0.2, to control current flow and enhance electron mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor structures are used, then manufacturing is simpler, but current collapse occurs and electron mobility decreases
Solution Approach 1:
The semiconductor structure is divided into multiple distinct layers including a first semiconductor layer, second semiconductor layer, first compound layer, and second compound layer. Each layer has specific thickness ranges and compositional characteristics that work together to suppress current collapse while maintaining manufacturability through standardized layer-by-layer fabrication processes.
Solution Approach 2:
The invention employs composite material structures with alternating semiconductor layers (AlGaN) and compound layers (AlN, AlSiON). These composite layers have different optical and electrical properties that collectively enhance electron mobility and suppress current collapse, with the second compound layer specifically designed to passivate trap states at interfaces.
2Reliability
If Al concentration in first compound region is increased, then electron mobility improves, but on-resistance increases
Solution Approach 1:
The Al concentration is locally optimized in different regions: the first compound layer has high Al concentration (0.3-0.7) to generate strong piezoelectric fields that enhance electron mobility in the adjacent semiconductor layer, while the second compound layer has lower Al concentration (0.05-0.3) to reduce resistance. This local quality variation allows simultaneous achievement of high electron mobility and low on-resistance.
Solution Approach 2:
The invention changes the Al concentration parameter across different layers and regions to optimize performance. The first compound layer uses higher Al concentration for electron mobility enhancement, while the second compound layer uses lower Al concentration for resistance reduction. The thickness parameters of each layer are also precisely controlled within specific ranges to achieve the desired balance between mobility and resistance.
3Reliability
If interface quality between layers is improved, then trap generation is suppressed, but manufacturing precision requirements increase
Solution Approach 1:
The second compound layer acts as an intermediary layer between the semiconductor layers, providing trap state passivation at the interfaces. This intermediary layer with specific compositional characteristics (Al, Si, O, N) reduces interface defects and improves overall interface quality, making the structure more tolerant to manufacturing variations while still achieving low trap generation.
Solution Approach 2:
The patent specifies preliminary compositional and thickness parameters for each layer that are designed to preemptively compensate for potential interface defects. By pre-configuring the layers with optimal Al concentrations and thicknesses before device operation, the structure proactively suppresses trap generation rather than relying on post-fabrication adjustments, thereby reducing the stringency of manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables stable characteristics, high electron mobility, and low on-resistance by suppressing trap generation and improving the interface between layers, resulting in a semiconductor device with reduced current collapse and stable threshold voltage.
Implementation Method 1
a first compound region of Al and N without oxygen or with a lower oxygen concentration than a nitrogen concentration, the first compound region not including Ga, or a first compound region Ga concentration being lower than a first compound region Al concentration
Implementation Method 2
a first ratio of a second position nitrogen concentration to a second position oxygen concentration being not less than 0.1 and not more than 0.2
Implementation Method 3
enables stable characteristics, high electron mobility, and low on-resistance by suppressing trap generation and improving the interface between layers
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first layer, a second layer, and a first insulating layer. The third electrode includes a first electrode portion. The first semiconductor region includes Alx1Ga1-x1N (0≤x1<1). The first semiconductor region includes a first partial region, a second partial region, a third partial region, a fourth partial region and a fifth partial region. The second semiconductor region includes Alx2Ga1-x2N (x1<x2≤1). The second semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first layer includes Al and N. The first layer includes a first compound region. The second layer includes Al, Si, O and N. The second layer includes a first intermediate region. The first insulating layer includes Si and O.