AlGaN Power Generation Element with Composition Gradients
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Solution Overview
Problem
Current power generation elements face inefficiencies in converting temperature differences into electrical current due to high Schottky barrier heights and poor electrical contact characteristics between conductive layers and semiconductor members.
Innovation Solution
A power generation element design featuring a first conductive layer, a second conductive layer, and members with varying AlGaN regions, where the Al composition ratio gradients facilitate efficient electron emission and collection, reducing the Schottky barrier height and enhancing electrical contact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional conductive layers and semiconductor members are used, then the structure is simple, but the Schottky barrier height is high and electrical contact characteristics are poor
Solution Approach 1:
The patent applies local quality by creating AlGaN regions with different Al composition ratios at different locations within the semiconductor member. Specifically, the Al composition ratio varies from the first region (in contact with the first conductive layer) to the second region (in contact with the second conductive layer), optimizing electrical contact characteristics at each interface while managing Schottky barrier heights locally.
Solution Approach 2:
The patent uses composite materials by combining multiple semiconductor regions with different compositions (AlGaN with varying Al ratios) within a single semiconductor member. This composite structure allows different regions to serve different functions: one region optimized for contact with the first conductive layer and another region optimized for contact with the second conductive layer, thereby improving overall electrical contact characteristics.
2Productivity
If Al composition ratios are optimized to reduce Schottky barrier height, then power generation efficiency improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies parameter changes by systematically varying the Al composition ratio across different regions of the semiconductor member. The Al composition ratio is changed from the first region to the second region to optimize electrical contact characteristics and reduce Schottky barrier height, thereby improving power generation efficiency. This controlled parameter variation allows optimization of performance while managing manufacturing complexity.
3Power
If crystal orientation is optimized for electron emission, then current density increases, but device complexity increases
Solution Approach 1:
The patent applies local quality by assigning different crystal orientations to different regions of the semiconductor member. The first region has a crystal orientation optimized for contact with the first conductive layer, while the second region has a crystal orientation optimized for contact with the second conductive layer. This local optimization of crystal orientation improves current density and power generation efficiency while managing the complexity of crystal growth processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves a high current density and power generation efficiency by optimizing the Al composition ratios and crystal orientations in the semiconductor members, leading to improved electrical contact and reduced energy barriers for electron flow.
Implementation Method 1
a power generation element including an emitter electrode to which heat is applied from a heat source, and a collector electrode capturing thermions from the emitter electrode
Data Source
AI summary
According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, a first member provided between the first conductive layer and the second conductive layer, and a second member separated from the first member and provided between the first member and the second conductive layer. The first member includes a first region including Alx1Ga1-x1N (0≤x1<1), and a second region including Alx2Ga1-x2N (x1<x2≤1) and being provided between the first region and the second member. A <000-1> direction of the first member has a component in an orientation from the first conductive layer toward the second conductive layer.