AlGaN Nitride Layer Structure for Threshold and Leakage Control
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Solution Overview
Problem
Semiconductor devices face challenges in achieving improved characteristics such as high carrier mobility, high threshold voltage, and stable operation while minimizing leak current and impurity intrusion during manufacturing.
Innovation Solution
The semiconductor device incorporates a specific structure with Al x1 Ga 1-x1 N and Al x2 Ga 1-x2 N semiconductor regions, a nitride region with varying thicknesses, and insulating members to control current flow and suppress impurity intrusion, featuring a gate electrode position between source and drain electrodes, and utilizing AlN and AlGaN layers to enhance mobility and threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If AlN and AlGaN layers are used to enhance carrier mobility and threshold voltage, then device characteristics are improved, but manufacturing complexity increases due to precise thickness control requirements
Solution Approach 1:
The patent applies parameter changes by systematically varying the thickness of AlN and AlGaN layers, and the Al composition ratio, to optimize device characteristics. Specific thickness ranges are defined for different layers to achieve high carrier mobility and threshold voltage while maintaining manufacturability through controlled parameter variations.
Solution Approach 2:
The patent uses composite materials by combining multiple semiconductor layers with different compositions (AlN, AlGaN, GaN) in a heterostructure. This composite approach enables simultaneous achievement of high carrier mobility through band alignment and high threshold voltage through material composition control, resolving the contradiction between performance improvement and manufacturing complexity.
2Reliability
If nitride region thickness is increased to suppress impurity intrusion, then device stability improves, but on-resistance increases
Solution Approach 1:
The patent applies local quality by creating a nitride region with non-uniform thickness distribution. The thickness varies across different regions of the nitride layer, allowing suppression of impurity intrusion in critical areas while maintaining lower resistance paths in current-conducting regions. This spatial variation in thickness resolves the contradiction between stability and on-resistance.
Solution Approach 2:
The patent uses parameter changes by defining specific thickness ranges for the nitride region (1 nm to 10 nm) and varying the Al composition ratio to optimize the balance between impurity suppression and resistance. By controlling these parameters within specific ranges, the patent achieves both device stability and acceptable on-resistance levels.
3Reliability
If Al composition ratio is increased to achieve high carrier concentration, then threshold voltage control improves, but crystallinity may deteriorate
Solution Approach 1:
The patent applies parameter changes by defining an optimal range for the Al composition ratio (0.3 to 0.7) that balances threshold voltage control and crystallinity. Within this range, the material achieves sufficient bandgap engineering for voltage control while maintaining crystal structure stability. The patent also specifies thickness parameters that work synergistically with composition to preserve crystallinity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high carrier mobility, stable operation, and reduced leak current, while allowing for increased Al composition in the nitride region, facilitating high carrier concentration and crystallinity, and achieving appropriate threshold voltage and low on-resistance.
Implementation Method 1
utilizing AlN and AlGaN layers to enhance mobility and threshold voltage
Implementation Method 2
a nitride region with varying thicknesses, and insulating members to control current flow and suppress impurity intrusion
Data Source
Figure 1
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Figure 3~4
AI summary
A semiconductor device includes a first electrode (51), a second electrode (52), a third electrode (53), a first semiconductor region (10), a second semiconductor region (20), a first nitride region (30), and a first insulating member (41). The first semiconductor region includes Alx1Ga1-x1N (0 ≤ x1 < 1). The second semiconductor region includes Alx2Ga1-x2N (0 < x2 < 1, x1 < x2). A first nitride portion thickness (t31) along a second direction of the first nitride portion is thicker than a second nitride portion thickness (t32) along the first direction of the part of the second nitride portion. A first semiconductor portion thickness (t21) along the second direction of the first semiconductor portion is thicker than the first nitride portion thickness.