Aligned-Bonding Light-Emitting Device for Heat Dissipation

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Solution Overview

Problem

The existing semiconductor optoelectrical devices face challenges in achieving high light-emitting efficiency due to the limitations of growth substrates, which often have low heat dissipation capabilities, and the bonding layers used in wafer-to-wafer bonding restrict the flexibility of light-emitting diode design and packaging.

Innovation Solution

A method for manufacturing a light-emitting device involves aligning and bonding a semiconductor light-emitting stack with a heat-dissipation substrate using a bonding layer with distinct alignment patterns and reflectivity differences, allowing for improved heat management and design flexibility by using materials like metals and organic adhesives for the alignment patterns and non-alignment regions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If GaAs substrate is used as growth substrate for red light diode, then the semiconductor epitaxial layer quality is improved, but the heat dissipation ability deteriorates

Engineering Contradiction:
Improvesemiconductor epitaxial layer qualityVSAvoidheat dissipation ability
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

The patent divides the substrate system into two separate substrates: a GaAs growth substrate for cultivating high-quality semiconductor epitaxial layers, and a separate heat-dissipation substrate (such as sapphire or SiC) for thermal management. The epitaxial layer is transferred from the growth substrate to the heat-dissipation substrate, allowing each substrate to optimize its specific function without compromise.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a bonding layer as an intermediary between the semiconductor epitaxial layer and the heat-dissipation substrate. This bonding layer facilitates the transfer and bonding process, enabling the epitaxial layer to be moved from the GaAs growth substrate to the heat-dissipation substrate, thus resolving the conflict between growth quality and heat dissipation.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If a single material bonding layer is used to bond the semiconductor epitaxial layer and heat-dissipation substrate, then the bonding process is simplified, but the design flexibility and wafer level packaging capability are limited

Engineering Contradiction:
Improvebonding process simplicityVSAvoiddesign flexibility and packaging capability
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent employs different bonding layers with distinct materials and properties for different regions or functions. For example, certain bonding layers may be optimized for thermal conductivity, others for mechanical strength, and others for electrical isolation. This regional differentiation of bonding layer properties enables both simplified processing for each specific function and overall design flexibility for different packaging requirements.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses composite bonding layer structures combining multiple materials with complementary properties. These composite bonding layers simultaneously provide thermal management, mechanical bonding, and electrical isolation functions, thereby simplifying the overall bonding process while enhancing design flexibility and wafer-level packaging capability.

Inventive Principle:
Principle #40Composite materials

3Measurement precision

If alignment patterns with high reflectivity are used, then the alignment detection precision is improved, but the absorption of alignment light increases

Engineering Contradiction:
Improvealignment detection precisionVSAvoidalignment light absorption
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The patent carefully controls the reflectivity parameter of alignment patterns within an optimal range (5%-50%) rather than using maximum reflectivity. This parameter optimization ensures sufficient contrast for alignment detection while minimizing light absorption and associated energy loss or heating effects.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS9653333B2Method of manufacturing lighting emitting device with aligned-bonding
Publication Date: 2017.05.16 ENNOSTAR CORP
  • US9653333B2 patent drawing
  • US9653333B2 patent drawing
  • US9653333B2 patent drawing

AI summary

A method of manufacturing a light-emitting device comprises the steps of: providing a semiconductor light-emitting stack having a first connecting surface and a first alignment pattern; providing a substrate having a second connecting surface and a second alignment pattern; detecting the position of the first alignment pattern and the position of the second alignment pattern; and moving at least one of the substrate and the semiconductor light-emitting stack to make the first alignment pattern be aligned with the second alignment pattern.