Aligned Capacitor Layers for 3D IC Package Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor technologies face challenges in integrating different types of components within a single package, particularly in achieving efficient alignment and miniaturization of components in 2.5D and 3D IC packages.
Innovation Solution
The semiconductor device incorporates a substrate with multiple conductive and insulating layers forming capacitors, where the peripheral edges of these layers are aligned to facilitate efficient integration and miniaturization, and a method of manufacturing involves sequential formation and selective etching of these layers to achieve precise alignment and surface area optimization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If different types of components are integrated into a single package, then component integration is improved, but alignment precision deteriorates
Solution Approach 1:
The patent divides the integration process into separate stages: first forming the substrate with initial components, then adding subsequent components in distinct fabrication steps. This segmentation allows each component type to be optimized independently while maintaining overall integration, resolving the conflict between integration versatility and alignment precision.
Solution Approach 2:
The patent performs preliminary alignment marker formation and layer preparation before actual component integration. By pre-establishing reference structures and alignment features on the substrate, subsequent components can be precisely positioned without compromising the integration of multiple component types.
2Adaptability or versatility
If multiple layers are formed sequentially, then component functionality is improved, but manufacturing complexity increases
Solution Approach 1:
The patent employs universal fabrication processes that can form multiple layer types using the same equipment and methods. The conductive and insulating layers are created through standardized deposition and patterning techniques that serve multiple functions across different component types, reducing manufacturing complexity while maintaining functional versatility.
Solution Approach 2:
The patent varies material parameters and deposition conditions to achieve different layer properties from the same base processes. By changing parameters such as deposition rate, temperature, or material composition rather than using entirely different fabrication methods, the patent maintains process simplicity while enabling diverse component functionalities.
3Area of stationary object
If peripheral edges are aligned, then package size is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent forms alignment markers and reference structures on the substrate before depositing subsequent layers. These preliminary features serve as guides for precise edge alignment, enabling reduced package size without proportionally increasing manufacturing precision requirements. The alignment markers are created in advance to establish reference points for later steps.
Solution Approach 2:
The patent employs self-aligned fabrication techniques where previously formed structures automatically serve as alignment references for subsequent layers. The peripheral edges of conductive and insulating layers are positioned relative to each other using the inherent geometry of previously deposited features, eliminating the need for separate high-precision alignment operations.
Data Source
AI summary
A semiconductor device and a method for manufacturing the same is described. The semiconductor device includes a substrate, a first capacitor and a second capacitor. The first capacitor includes a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer is disposed on the substrate. The first insulating layer is disposed on the first conductive layer and has a first peripheral edge. The second conductive layer is disposed on the first insulating layer and has a second peripheral edge. The second capacitor includes a third conductive layer, a second insulating layer and the second conductive layer. The second insulating layer is disposed on the second conductive layer and has a third peripheral edge. The third conductive layer is disposed on the second insulating layer and has a fourth peripheral edge. The first, second, third and fourth peripheral edges are aligned with one another.