Exclusion Ring Alignment Structure for Wafer Backside Deposition
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Solution Overview
Problem
In chemical vapor deposition and atomic layer deposition processes, particulate contamination from unwanted film deposition on the wafer edge and backside poses challenges, leading to defects and contamination during handling and processing.
Innovation Solution
An exclusion ring with alignment structures is used to ensure proper alignment and prevent deposition on the wafer edge and backside by utilizing a deposition control gas, which includes reactive components to enhance deposition uniformity and exclude process gas from these areas, assisted by a structure like the exclusion guard or minimum overlap exclusion ring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the wafer edge and backside are unprotected during deposition, then deposition coverage is improved, but particulate contamination increases due to peeling and flaking
Solution Approach 1:
The patent extracts and removes the harmful deposited material from the wafer edge and backside regions by introducing a deposition control gas that selectively prevents deposition in these areas, thereby eliminating the source of particulate contamination while maintaining deposition on the front side
Solution Approach 2:
The patent applies different deposition conditions to different regions of the wafer by using a deposition control gas with reactive components that create a localized protective atmosphere at the wafer periphery and backside, allowing uniform deposition on the front side while preventing deposition on edges and backside
2Manufacturing precision
If deposition control gas with reactive components is used, then deposition uniformity is improved, but process gas exclusion complexity increases
Solution Approach 1:
The patent changes the chemical composition parameters of the deposition control gas by incorporating reactive components that selectively react with process gases or substrates at the wafer periphery and backside, thereby achieving uniform deposition control through chemical parameter modification rather than complex physical barriers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prevents unwanted deposition on the wafer edge and backside, reducing particulate contamination and ensuring uniform film deposition on the front side periphery, thereby improving the quality and reducing defects in the semiconductor manufacturing process.
Implementation Method 1
Chemical vapor deposition ('CVD') is a gas reaction process commonly used in the semiconductor industry to form thin layers of material, known as films, over an integrated circuit substrate. The CVD process is based on the thermal, plasma, or thermal and plasma decomposition and reaction of selected gases.
Data Source
AI summary
The present disclosure relates to exclusion rings for use in processing a semiconductor substrate in a processing chamber, such as a chemical vapor deposition chamber. The exclusion ring includes an alignment structure that cooperates with an alignment structure on a platen on which the exclusion ring will rest during processing of the wafer. The first alignment structure includes a guiding surface which promotes the reception of and positioning of the second alignment structure within the first alignment structure. Methods of utilizing the described exclusion rings are also described.