Stacked Semiconductor Structure With Aligned TSV Heat Paths
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Solution Overview
Problem
Current semiconductor structures face challenges in improving heat dissipation and shortening signal transmission paths while maintaining efficient device stacking.
Innovation Solution
The semiconductor structure incorporates through-substrate vias (TSVs) that are aligned and electrically connected across device structures, providing a heat conduction path and reducing signal transmission distance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If device structures are stacked to shorten signal transmission path and reduce area, then area and signal transmission path are improved, but heat dissipation ability deteriorates
Solution Approach 1:
The semiconductor structure is divided into multiple device structures stacked vertically, with each structure containing substrates and TSVs. This segmentation allows heat to be dissipated through multiple interfaces and pathways rather than through a single large structure, improving heat dissipation while maintaining compact area.
Solution Approach 2:
Through-substrate vias (TSVs) are introduced as intermediary conductive elements that extend through the substrates in each device structure. These TSVs serve as heat conduction pathways, transferring heat from upper device structures to lower ones and ultimately to the substrate, enabling effective heat dissipation in the stacked configuration.
2Area of stationary object
If device structures are stacked to reduce area, then area is improved, but heat conduction path length increases
Solution Approach 1:
The patent transitions from planar heat dissipation to three-dimensional heat conduction by stacking device structures vertically. TSVs provide direct vertical heat conduction pathways through the stacked substrates, allowing heat to travel efficiently in the vertical dimension rather than laterally across large distances, thus reducing effective heat conduction path length despite the stacked configuration.
3Reliability
If TSVs are aligned and electrically connected across device structures, then heat dissipation and signal transmission are improved, but manufacturing complexity increases
Solution Approach 1:
TSVs are strategically positioned and aligned only in regions where heat dissipation and electrical connection are most critical. The alignment and electrical connection features are implemented locally at specific TSV positions rather than uniformly across all structures, reducing overall manufacturing complexity while maintaining effectiveness where needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances heat dissipation and signal transmission efficiency, improving the overall performance of the semiconductor structure by providing a robust heat conduction path and shortened signal transmission paths.
Implementation Method 1
The first TSV in the endmost device structure and the first TSV in another of the device structures are aligned with each other and electrically connected to each other, thereby a good heat conduction path can be provided
Implementation Method 2
The first TSV in the endmost device structure and the first TSV in another of the device structures are aligned with each other and electrically connected to each other
Data Source
AI summary
A semiconductor structure including device structures arranged in a stack is provided. The device structures include substrates and through-substrate vias (TSVs). The TSVs are located in the substrates. The TSVs includes first TSVs. Each of the device structures includes the corresponding substrate and the corresponding first TSV. Each of the first TSVs passes through the corresponding substrate. The number of the TSVs in the endmost device structure is less than the number of the TSVs in another of the device structures. The first TSV in the endmost device structure and the first TSV in another of the device structures are aligned with each other and electrically connected to each other.