Alignment Mark Protection in Semiconductor Fabrication

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

During the planarizing process in semiconductor device fabrication, alignment marks are often damaged, leading to defects that can be transferred to the substrate, which affects the accuracy and reliability of the superjunction power device.

Innovation Solution

A method involving the formation of a stopper layer and alignment mark material in the scribe lane region, where the stopper layer protects the alignment mark by being conformally deposited and planarized up to the substrate's surface, preventing damage during the planarizing process and ensuring no defects are transferred to the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a planarizing process is performed to form deep trenches and epitaxial layers, then manufacturing precision is improved, but alignment marks are damaged leading to defects

Engineering Contradiction:
Improvetrench formation precisionVSAvoidalignment mark integrity
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The alignment mark is formed before the planarizing process, and a protective layer is deposited over it in advance. This preliminary action ensures the alignment mark is in place for subsequent processing while being protected from damage during planarization.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

A protective layer is introduced as an intermediary element between the alignment mark and the planarizing process. This protective layer absorbs the mechanical stress and prevents direct contact between the planarization tools and the alignment mark, thereby preventing damage.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If alignment marks are used for accurate alignment during layer to layer matching, then manufacturing precision is improved, but the alignment marks are damaged by the planarizing process

Engineering Contradiction:
Improvealignment accuracyVSAvoidplanarizing process damage
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The protective layer serves as an intermediary that shields the alignment mark from the harmful mechanical effects of the planarizing process. This layer is specifically designed to withstand planarization conditions while preserving the underlying alignment mark structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The protective layer is deposited beforehand to cushion and absorb the mechanical stress that would otherwise be transmitted to the alignment mark during planarization. This prior cushioning prevents damage before it can occur.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Manufacturing precision

If the planarizing process is performed to ensure proper layer formation, then manufacturing precision is improved, but defects are transited to the substrate

Engineering Contradiction:
Improvelayer formation precisionVSAvoidsubstrate defect-free status
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The protective layer acts as an intermediary barrier that prevents defect generation and transmission to the substrate during the planarizing process. By absorbing mechanical stress and preventing direct tool-substrate contact, it eliminates the harmful effects that would otherwise create defects.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively prevents alignment mark damage and defect transfer, maintaining the integrity of the alignment marks and substrate, thereby enhancing the fabrication process's accuracy and reliability.

Implementation Method 1

A stopper layer is formed in a part in the trench

Methodology Applied
Scientific EffectConformal deposition: Deposition (physical)

Data Source

PatentUS9252106B2Semiconductor device and method of fabricating the same
Publication Date: 2016.02.02 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.