Alignment Moat Structure for Void-Free Semiconductor Bonding

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Solution Overview

Problem

Proper alignment of semiconductor devices during direct wafer or chip bonding is challenging, especially as design rules scale to smaller dimensions, leading to incomplete bond formation and the presence of voids.

Innovation Solution

The introduction of an alignment moat in the semiconductor apparatus, which involves a conductive material with indented spacers surrounding it, helps in maintaining proper alignment and preventing void formation during heat treatment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If direct wafer or chip bonding is performed without alignment moat, then bonding process is simpler, but alignment precision deteriorates leading to incomplete bond formation and voids

Engineering Contradiction:
Improvealignment precisionVSAvoidbonding process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The alignment moat is formed in advance during the bonding preparation stage, before the actual bonding occurs. This preliminary structural feature guides the alignment process and ensures precise positioning of the bonding interface, thereby improving alignment precision without complicating the bonding operation itself.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The alignment moat acts as an intermediary structural element between the bonding surfaces. It provides a physical reference feature that mediates the alignment process, enabling precise positioning while keeping the bonding process itself relatively simple.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If alignment moat is introduced to improve alignment, then bond formation quality improves, but device structure becomes more complex

Engineering Contradiction:
Improvebond formation qualityVSAvoidsemiconductor apparatus structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The alignment moat divides the bonding interface region into distinct segments - the moat structure itself and the bonding surfaces. This segmentation provides clear alignment references and ensures that bonding occurs at the correct location, thereby improving bond formation quality while adding minimal structural complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The alignment moat introduces a localized structural feature only at the bonding interface where it is needed for alignment. The rest of the semiconductor apparatus maintains its original simple structure, thus improving reliability at the critical bonding region without significantly increasing overall device complexity.

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If spacer top surface is coplanar with conductive material, then manufacturing is easier, but void formation increases during bonding

Engineering Contradiction:
Improvespacer formation simplicityVSAvoidvoid formation
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The alignment moat is formed in advance by recessing the spacer top surface before the bonding process. This preliminary action creates a structural feature that prevents void formation during bonding, while the recessed region can be formed using standard etching processes that do not significantly complicate manufacturing.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The alignment moat effectively reduces the occurrence of voids at the interface between bonded semiconductor devices, ensuring complete bond formation and enhancing the electrical properties and reliability of the semiconductor devices.

Implementation Method 1

The alignment moat that extends continuously along the entire circumference of the conductive material can prevent or mitigate contact between the conductive material and a different type of material (e.g., a dielectric material)

Methodology Applied
Scientific EffectCapillary action: Capillary Action

Data Source

PatentUS12347713B2Semiconductor apparatus with an alignment moat
Publication Date: 2025.07.01 MICRON TECHNOLOGY INC
  • US12347713B2 patent drawing
  • US12347713B2 patent drawing
  • US12347713B2 patent drawing

AI summary

Methods, apparatuses, and systems related to an apparatus with an alignment moat are described. An example apparatus includes a conductive material divided into first and second portions which include top surfaces connected to each other, respectively, a first spacer surrounding the first portion of the conductive material, and a second spacer surrounding the second portion of the conductive material, where the top surface of the first spacer and the top surface of the second spacer are indented from the top surface of the first portion and the top surface of the second portion, respectively, to define an alignment moat.