Alignment Pattern Support Structure for Crack-Resistant Semiconductors

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Solution Overview

Problem

As the degree of integration of semiconductor devices increases, refining alignment patterns presents challenges in manufacturing operations, particularly in preventing physical damage, crack formation, and maintaining structural integrity during the manufacturing process.

Innovation Solution

The semiconductor device incorporates a support pattern within its alignment pattern, featuring an underlayer, core layers with segments, post patterns, a passivation layer, a coating layer, and a support pattern that vertically passes through these layers, providing structural support and preventing cracks by blocking and retarding their formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If alignment patterns are refined to increase degree of integration, then device functionality is improved, but structural integrity and resistance to physical damage deteriorate

Engineering Contradiction:

Improvedegree of integrationVSAvoidstructural integrity

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The alignment pattern is divided into multiple segments (first alignment pattern, second alignment pattern, third alignment pattern, fourth alignment pattern) arranged in a pinwheel configuration. Each segment contains unit alignment patterns that are further divided, creating a segmented structure that maintains integrity while enabling high integration.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Support patterns are introduced extending in the vertical direction through multiple layers (lower core layer, upper core layer, passivation layer, coating layer). This vertical dimension provides structural reinforcement without occupying horizontal space, allowing refined alignment patterns to maintain structural integrity while achieving higher integration density.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Productivity

If alignment patterns are refined for higher integration, then device capability is improved, but resistance to crack formation deteriorates

Engineering Contradiction:

Improveintegration densityVSAvoidcrack formation

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

Support patterns are pre-formed extending vertically through all layers before the alignment patterns are fully assembled. These support patterns act as preventive reinforcement structures that cushion against crack formation during subsequent manufacturing processes and device operation, allowing refined alignment patterns to resist cracks while maintaining high integration.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The alignment pattern structure combines multiple materials with different properties: core layers provide structural framework, passivation layers provide protective coating, and support patterns provide mechanical reinforcement. This composite structure enables refined alignment patterns to resist crack formation while achieving high integration density.

Inventive Principle:

Principle #40Composite materials

3Reliability

If support pattern is added to alignment pattern, then structural integrity is improved, but device complexity increases

Engineering Contradiction:

Improvestructural integrityVSAvoidpattern structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The support patterns serve multiple functions simultaneously: they provide vertical structural reinforcement, prevent crack propagation, and act as a framework for assembling the segmented alignment patterns. This multi-functionality allows the support structure to improve structural integrity without proportionally increasing device complexity.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The support patterns are nested within the multi-layer structure, extending vertically through the lower core layer, upper core layer, passivation layer, and coating layer. This nested configuration integrates the support function within the existing layer structure rather than adding separate external components, thereby improving structural integrity while minimizing complexity increase.

Inventive Principle:

Principle #7Nested doll (Nesting)

Data Source

PatentUS20240006333A1Semiconductor device including an alignment pattern

Publication Date: 2024.01.04 SK HYNIX INC

AI summary

A semiconductor includes an underlayer; a lower core layer spaced apart from the underlayer, the lower core layer including a plurality of lower segments spaced apart from each other in a horizontal direction; an upper core layer spaced apart from the lower core layer, the upper core layer including a plurality of upper segments spaced apart from each other in the horizontal direction; a post pattern vertically penetrating the upper core layer and the lower core layer; a passivation layer surrounding the lower core layer, the upper core layer, and the post pattern; coating layer surrounding the passivation layer; and a support pattern extending in the vertical direction and passing through the lower core layer, the upper core layer, the passivation layer, and the coating layer.