Alkali-Hydroxycarboxylic Acid Treatment Liquid for Semiconductor Resist Removal
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Solution Overview
Problem
Existing treatment liquids for semiconductor substrates have limitations in resist film removal performance and residue removal performance, necessitating the development of a more effective treatment liquid.
Innovation Solution
A treatment liquid comprising at least one alkali compound, such as a quaternary ammonium salt or an inorganic alkali compound, and a hydroxycarboxylic acid, with a specific mass ratio and C log P value, is developed to enhance resist film and residue removal performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing treatment liquids are used for washing semiconductor substrates, then basic cleaning is achieved, but resist film removal performance and residue removal performance are insufficient
Solution Approach 1:
The invention changes the chemical parameters of the treatment liquid by incorporating specific alkali compounds (quaternary ammonium salts or inorganic alkali compounds) and hydroxycarboxylic acids in controlled mass ratios (0.001 to 1.0), thereby optimizing both resist film removal performance and residue removal performance simultaneously
Solution Approach 2:
The invention uses a composite chemical system combining alkali compounds and hydroxycarboxylic acids to achieve synergistic effects, where the alkali compound provides resist film removal capability and the hydroxycarboxylic acid enhances residue removal performance, resolving the contradiction between the two performance requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment liquid demonstrates excellent resist film removal performance and residue removal performance, effectively addressing the limitations of existing solutions.
Implementation Method 1
A treatment liquid comprising at least one alkali compound selected from the group consisting of a quaternary ammonium salt and an inorganic alkali compound, and a hydroxycarboxylic acid
Implementation Method 2
The treatment liquid demonstrates excellent resist film removal performance and residue removal performance
Data Source
AI summary
An object of the present invention is to provide a treatment liquid having excellent resist film removal performance and excellent residue removal performance. Another object of the present invention is to provide a treatment method. The treatment liquid of an embodiment of the present invention is a treatment liquid containing an alkali compound and a hydroxycarboxylic acid, in which abrasive particles are not substantially contained, and a content mass ratio of a content of the hydroxycarboxylic acid to a content of the alkali compound is 0.001 and 1.0.