Alkaline Semiconductor Treatment Liquid for CMP Residue Cleaning
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Solution Overview
Problem
Existing semiconductor treatment liquids fail to achieve both anticorrosion properties with metals and cleanability for organic residues after chemical mechanical polishing treatments.
Innovation Solution
A semiconductor treatment liquid with a pH greater than 7.0, containing specific compounds like those represented by Formula (1), purine derivatives, and optionally tertiary amines and quaternary ammonium compounds, is used to treat objects post-chemical mechanical polishing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a treatment liquid is used to remove organic residues from a metal surface after chemical mechanical polishing, then cleanability for organic residues is improved, but anticorrosion properties deteriorate due to metal dissolution
Solution Approach 1:
The patent changes the pH parameter of the treatment liquid to be greater than 7.0 (alkaline condition), which fundamentally alters the chemical environment to simultaneously achieve organic residue removal and metal corrosion prevention. This parameter change enables the treatment liquid to dissolve organic residues while forming protective complexes with metal ions, preventing excessive metal dissolution.
Solution Approach 2:
The treatment liquid employs a composite formulation containing multiple functional components: a compound of Formula (1) as the primary active ingredient, purine compounds for enhanced metal protection, and optionally tertiary amines or quaternary ammonium compounds. This composite composition synergistically provides both cleanability and anticorrosion properties that single-component liquids cannot achieve.
2Manufacturing precision
If a treatment liquid with strong cleaning capability is used, then cleanability for organic residues is improved, but metal dissolution increases reducing anticorrosion properties
Solution Approach 1:
The purine compounds and compounds of Formula (1) act as intermediary substances that mediate between the treatment liquid and the metal surface. These intermediaries form protective complexes with metal ions, preventing direct aggressive interaction between the alkaline environment and the metal, thereby reducing metal dissolution while maintaining cleaning effectiveness.
Solution Approach 2:
By controlling the pH parameter to be greater than 7.0 and optimizing the concentration ratios of different components (particularly the mass ratio between compound of Formula (1) and purine compounds), the treatment liquid achieves optimal balance between cleaning power and metal protection, preventing excessive metal dissolution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The liquid provides excellent anticorrosion properties with metals and cleanability for organic residues, enhancing the manufacturing process of semiconductor devices.
Implementation Method 1
a method of etching or removing foreign substances on a surface of the substrate using a treatment liquid which dissolves a metal and/or an organic substance
Implementation Method 2
it is not possible to achieve both anticorrosion properties of suppressing dissolution of the metal and cleanability for organic residues
Data Source
AI summary
Provided is a semiconductor treatment liquid which has excellent anticorrosion properties with a metal and excellent cleanability for organic residues, in a case of being brought into contact with an object to be treated containing a metal, which has been subjected to a chemical mechanical polishing treatment. The semiconductor treatment liquid of the present invention contains a compound represented by Formula (1), and a pH of the semiconductor treatment liquid is more than 7.0.