Alkaline Surface Treatment Composition for CMP Residue Removal
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Solution Overview
Problem
Existing cleaning compositions fail to sufficiently remove residues, such as abrasive grains and organic substances, from semiconductor substrates after chemical mechanical polishing, leading to contamination and reduced electrical reliability.
Innovation Solution
A surface treatment composition comprising a polymer with a quaternary nitrogen-containing onium salt and an ammonium monocarboxylate buffer, maintaining a pH of 8.0 or more, effectively removes residues by electrostatic repulsion and suppresses etching rates on polished objects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cleaning compositions are used, then cleaning process is simple, but residues cannot be sufficiently removed from substrate surface
Solution Approach 1:
The patent changes the chemical parameters of the cleaning composition by specifying a pH range of 8.0 or more and incorporating ammonium monocarboxylate buffer to maintain stable alkaline conditions. This parameter optimization enables effective removal of residues while controlling etching rates, directly resolving the contradiction between cleaning effectiveness and residue prevention
Solution Approach 2:
The patent creates a composite cleaning system by combining multiple components: polymer (component A), ammonium monocarboxylate buffer (component B), and optionally surfactants and solvents. This composite formulation synergistically removes both organic and inorganic residues while maintaining substrate integrity, addressing the insufficient residue removal of conventional single-component cleaners
2Manufacturing precision
If strong cleaning agents are used to remove residues, then cleaning effectiveness improves, but etching rate of polished object increases
Solution Approach 1:
The patent optimizes the pH parameter to 8.0 or more and maintains it stable through buffer control, creating optimal conditions for residue removal while suppressing excessive etching. This precise parameter control allows the cleaning composition to effectively remove residues without compromising substrate integrity, resolving the contradiction between cleanliness and reliability
Solution Approach 2:
The patent creates different functional zones within the cleaning composition: component A provides gentle cleaning action, component B maintains stable pH to control etching rate, and optional surfactants target specific residue types. This localized functionality within the composition enables selective residue removal while protecting the substrate, addressing the contradiction between cleaning effectiveness and substrate protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition efficiently removes residues and prevents re-adhesion, while maintaining low etching rates on semiconductor substrates, thereby enhancing substrate cleanliness and reliability.
Implementation Method 1
component (B): a buffer represented by a formula: R—COO−NH4+ (wherein R is a linear or branched alkyl group having from 1 to 10 carbon atoms, or a phenyl group)
Implementation Method 2
a polymer having a constituent unit having a quaternary nitrogen-containing onium salt
Data Source
AI summary
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more:component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below,component (B): a buffer represented by a formula: R—COO—NH4+.