Alkaline Earth Oxide Deposition for High-k Low-Defect Dielectrics
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Solution Overview
Problem
There is a need for dielectrics with a high dielectric constant and low defectivity in integrated circuit manufacture to support higher operating speeds while minimizing parasitic currents.
Innovation Solution
A method of forming a layer comprising an alkaline earth metal and oxygen, involving multiple deposition cycles that include alkaline earth metal oxide and transition metal oxide cycles, with oxidant pulses to convert carbonate films into oxides, using specific precursors and reactants to achieve high dielectric constant and low defectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional dielectric materials are used to achieve high dielectric constant, then the dielectric constant is improved, but defectivity increases leading to higher parasitic currents
Solution Approach 1:
The patent forms composite oxide materials containing multiple metal elements (e.g., hafnium, zirconium, silicon, oxygen) to achieve high dielectric constant while maintaining low defectivity. The composite structure allows optimization of electrical properties that cannot be achieved with single-element dielectrics, resolving the contradiction between high dielectric constant and low defectivity
Solution Approach 2:
The patent employs atomic layer deposition (ALD) process parameters including temperature control (200-400°C), precise precursor dosing, and oxidant exposure to control the stoichiometry and crystalline structure of the oxide material. By adjusting deposition temperature and cycle conditions, the patent achieves dense, low-defect films with high dielectric constant
2Speed
If advanced integrated circuit technology is developed for higher operating speeds, then operating speed is improved, but the need for higher dielectric constant with lower defectivity becomes more critical
Solution Approach 1:
The patent replaces conventional physical vapor deposition methods with chemical vapor deposition (ALD) to achieve atomic-level precision in dielectric film formation. This substitution enables precise control of film thickness, composition, and density, meeting the manufacturing precision requirements for advanced high-speed integrated circuits
Solution Approach 2:
The patent performs preliminary surface preparation and controlled nucleation steps before main dielectric deposition to ensure uniform film growth and minimize defects. The multi-step ALD process including precursor exposure, purging, and oxidant treatment prepares the surface in advance to achieve high-quality films required for high-speed operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively forms high-quality dielectric layers with high dielectric constants and low defectivity, suitable for applications in MOSFET gate dielectrics and capacitors, enhancing integrated circuit performance.
Implementation Method 1
an oxidant pulse that comprises exposing the substrate to an oxidant to convert the alkaline earth metal carbonate film to an alkaline earth metal oxide
Implementation Method 2
executing a plurality of alkaline earth metal oxide deposition cycles
Data Source
AI summary
Described herein are methods and systems for forming oxides comprising an alkaline earth metal and optionally a transition metal. Suitable alkaline earth metals include strontium. Suitable transition metals include niobium.