Alkanol Hydroxylamine Detergent for CMP Substrate Flatness
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Solution Overview
Problem
Current detergent compositions for semiconductor substrates after chemical-mechanical polishing (CMP) struggle with effective removal of polishing agents, metal microparticles, and anticorrosives, leading to surface oxidation, corrosion, and instability in maintaining flatness over time, while also causing scratches and filter clogging during reuse.
Innovation Solution
A detergent composition containing an alkanol hydroxylamine compound with a specific pH range, combined with a basic compound and a polyglycerol derivative, effectively removes polishing agents and anticorrosives, prevents surface oxidation, and reduces filter clogging by suppressing the formation of secondary particles and maintaining substrate flatness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional detergent compositions are used for post-CMP cleaning, then polishing agents and metal microparticles can be removed, but the detergent fails to effectively remove anticorrosives and maintains flatness only temporarily
Solution Approach 1:
The patent modifies the chemical parameters of the detergent by incorporating alkanol hydroxylamine compounds with specific molecular structures (Formula 1) and controlling pH within 10-13, creating a detergent composition that maintains effective cleaning action over extended periods while preserving substrate flatness
Solution Approach 2:
The detergent composition combines multiple components including alkanol hydroxylamine compounds, basic compounds (Formula 2), and polyglycerol derivatives (Formula 3) in specific proportions, creating a composite chemical system that simultaneously achieves thorough removal of polishing agents, metal microparticles, and anticorrosives while maintaining long-term flatness
2Productivity
If polishing compositions are used to improve removal of polishing agents and metal microparticles, then cleaning effectiveness increases, but scratches are produced on the polished object and filter clogging occurs
Solution Approach 1:
The patent adjusts the chemical composition parameters by introducing alkanol hydroxylamine compounds with specific molecular weights and structures, which enable effective removal of polishing agents and metal microparticles while minimizing surface damage and preventing filter clogging through controlled particle suspension
Solution Approach 2:
The polyglycerol derivative components act as intermediaries that bridge the gap between aggressive cleaning agents and the substrate, mediating the removal process to achieve high productivity while preventing direct harmful interactions that cause scratches and filter clogging
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition ensures long-term stability and effectiveness in removing polishing agents and anticorrosives, preventing surface corrosion, and reducing scratches and filter clogging, thereby maintaining substrate flatness and quality over an extended period.
Implementation Method 1
a detergent composition containing an alkanol hydroxylamine compound... capable of sufficient removal of polishing agents, metal microparticles, and anticorrosives
Implementation Method 2
the anticorrosive forms a film on a surface of metal wiring, the film including a complex with a surface metal of the metal wiring
Implementation Method 3
metal wiring is easily oxidized and corroded during polishing. Therefore, in the CMP process, an anticorrosive (corrosion inhibitor), such as benzotriazole (BTA) or quinaldic acid (QCA), is added. The anticorrosive forms a film on a surface of metal wiring... and prevents corrosion
Implementation Method 4
maintenance of flatness after post-CMP cleaning (prevention of uneven growth of oxide films)
Data Source
AI summary
A detergent composition and a polishing composition are provided. The detergent composition facilitates sufficient removal of polishing agents, metal microparticles, and anticorrosives in cleaning of a semiconductor substrate and long-term maintenance of flatness of a metal wiring surface after cleaning and achieves excellent quality stability for a long period of time; and the polishing composition facilitates suppression of scratching on a polished object such as a semiconductor substrate, and reduction of filter clogging. A detergent composition containing an alkanol hydroxylamine compound represented by General Formula (1) and having a pH of 10 to 13, and a chemical-mechanical polishing composition containing the detergent composition and a polishing agent. In Formula (1), Ra1 and Ra2 are the same or different and each represents a hydrogen atom or an alkyl group having from 1 to 10 carbons and having from 1 to 3 hydroxyl groups, with proviso that Ra1 and Ra2 are not simultaneously hydrogen atoms, and a total number of hydroxyl groups present in Ra1 and Ra2 is not 0.