Alkoxide Precursor for ALD Thin Films
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Solution Overview
Problem
Conventional alkoxide compounds used in chemical vapor deposition methods lack sufficient thermal stability, which is crucial for achieving high-quality thin films, especially in Atomic Layer Deposition (ALD) processes.
Innovation Solution
A specific alkoxide compound represented by General Formula (I) is developed, featuring a structure with specific hydrocarbon groups, amino groups, and metal atoms like copper, iron, nickel, or manganese, providing high thermal stability and preventing spontaneous combustion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional alkoxide compounds are used as precursors for chemical vapor deposition, then the manufacturing process can be implemented, but the thermal stability is insufficient leading to spontaneous combustibility
Solution Approach 1:
The patent changes the chemical structure parameters of the precursor compound by introducing specific ligand structures (Formula 1) with particular functional groups and molecular configurations. This structural modification fundamentally alters the thermal decomposition behavior, raising the decomposition temperature and eliminating spontaneous combustibility while maintaining vapor deposition capability.
Solution Approach 2:
The invention creates a composite molecular structure combining the metal center with specifically designed organic ligands containing nitrogen-containing six-membered aromatic rings and carbonyl groups. This composite structure provides both the necessary reactivity for film formation and enhanced thermal stability through the synergistic interaction between metal and ligand components.
2Manufacturing precision
If the thermal stability of precursor compounds is increased for ALD method, then high-quality thin films can be formed, but conventional alkoxide compounds fail to achieve sufficient thermal stability
Solution Approach 1:
The patent modifies the molecular parameters of the precursor by incorporating ligands with specific structural features (Formula 1) that increase thermal decomposition temperature. The designed ligand structure with aromatic rings and carbonyl groups forms stable coordination complexes with metal atoms, enabling the precursor to withstand higher temperatures required for high-quality thin film formation without premature decomposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new alkoxide compound ensures high thermal stability and prevents spontaneous combustion, enabling the formation of high-quality thin films with improved properties, particularly suitable for ALD methods.
Implementation Method 1
When a thin film is formed by vaporizing a raw material for chemical vapor deposition
Implementation Method 2
high thermal stability is extremely important for the precursor in the ALD method
Data Source
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AI summary
An alkoxide compound is represented by General Formula (I) below: wherein R1 to R3 each independently represent hydrogen, a C1-12 hydrocarbon group, etc.; R4 represents a C1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n + m represents the valence of the metal atom or silicon atom.