AlN Bonding Layer Structure for IC Heat Dissipation
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the increasing heat dissipation issues due to the scaling down of integrated circuits, which affects yield and performance.
Innovation Solution
The use of a multilayer thermal dissipation material comprising aluminum nitride (AlN) and aluminum oxide (AlO) or aluminum oxynitride (AlON) layers to improve heat dissipation and adhesion in semiconductor devices, functioning as a bonding layer or thermal dissipation pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integrated circuits are scaled down to increase functional density, then productivity and production efficiency are improved, but heat dissipation becomes more difficult and thermal management becomes problematic
Solution Approach 1:
The patent employs a composite thermal dissipation material comprising a first material layer (such as aluminum nitride with high thermal conductivity) and a second material layer (such as silicon oxide or silicon nitride with low thermal expansion coefficient). This composite structure simultaneously addresses thermal conductivity requirements and thermal expansion matching with the semiconductor substrate, enabling effective heat dissipation in scaled-down integrated circuits.
2Temperature
If thermal dissipation material is added to improve heat dissipation, then temperature control is improved, but device complexity increases
Solution Approach 1:
The thermal dissipation material in the patent serves multiple functions simultaneously: it provides thermal conduction pathways for heat dissipation, acts as an etch stop layer during fabrication processes, and functions as a bonding layer between the semiconductor substrate and overlying structures. This multi-functionality reduces device complexity by consolidating multiple required layers into a single composite material system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances thermal dissipation, reduces electron leakage, and improves the yield and performance of semiconductor devices by providing a effective thermal dissipation path.
Implementation Method 1
The first layer is an aluminum nitride (AlN) layer, and the second layer is one of an aluminum oxide (AlO) layer and an aluminum oxynitride (AlON) layer. By using the thermal dissipation material, the semiconductor device may have an improved thermal dissipation
Data Source
AI summary
A semiconductor device includes a first integrated circuit, a second integrated circuit and a bonding layer. The bonding layer is disposed between the first integrated circuit and the second integrated circuit, wherein the bonding layer includes a first layer and a second layer, the first layer is an aluminum nitride (AlN) layer, and the second layer is one of an aluminum oxide (AlO) layer and an aluminum oxynitride (AlON) layer.