Aluminum Nitride Substrate Removal for UV LED Extraction

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Solution Overview

Problem

The photon-extraction efficiency of short-wavelength ultraviolet light-emitting diodes (UV LEDs) is limited due to high defect levels and substrate absorption, particularly in devices grown on foreign substrates like sapphire, which results in low wall-plug efficiencies and short device lifetimes.

Innovation Solution

The removal of all or a portion of the AlN substrate from UV light-emitting devices is achieved through the use of release layers with specific absorption bands or patterned substrates, allowing for fracture and separation of the device structure, thereby enhancing photon extraction efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If UV LEDs are grown on foreign substrates like sapphire, then device fabrication is enabled, but defect densities remain high and device lifetime is limited

Engineering Contradiction:
Improvedevice lifetimeVSAvoiddefect density
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent extracts the AlN substrate from the final device structure by introducing a release layer that allows selective removal of the substrate after device fabrication. This enables the device to benefit from low-defect AlN growth while eliminating the substrate's harmful effects on photon extraction and device performance.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The release layer is incorporated into the structure during the preliminary fabrication stages, enabling subsequent substrate removal. This preliminary action sets up the condition for later extracting the substrate without compromising the already-fabricated device structure.

Inventive Principle:
Principle #10Preliminary action

2Strength

If AlN substrate is retained in UV LED structure, then mechanical support is provided, but substrate absorption reduces photon-extraction efficiency

Engineering Contradiction:
Improvemechanical supportVSAvoidphoton extraction efficiency
Core Design Contradiction:
StrengthVSLoss of energy

Solution Approach 1:

The AlN substrate is extracted from the final device structure through selective removal processes. The release layer enables clean separation, removing the substrate's light-absorbing properties while preserving the mechanically robust device structure that was grown on the substrate.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The device structure is segmented into the permanent device components and the removable substrate portion. The release layer creates a separation plane that allows the substrate to be removed as a distinct segment, leaving the device structure intact.

Inventive Principle:
Principle #1Segmentation

3Use of energy by moving object

If high aluminum concentration is used in nitride-based devices, then internal efficiency is improved, but substrate absorption and refractive index effects worsen photon extraction

Engineering Contradiction:
Improveinternal efficiencyVSAvoidphoton extraction efficiency
Core Design Contradiction:
Use of energy by moving objectVSLoss of energy

Solution Approach 1:

The substrate is extracted from the device structure to eliminate its harmful optical effects. This allows high aluminum concentration devices to achieve both high internal efficiency and improved photon extraction by removing the substrate's absorption and refractive index barriers.

Inventive Principle:
Principle #2Taking out (Extraction)

4Loss of energy

If release layer is introduced for substrate removal, then photon extraction efficiency is improved, but device structure complexity increases

Engineering Contradiction:
Improvephoton extraction efficiencyVSAvoidstructure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The release layer acts as an intermediary element between the device structure and the substrate. This thin intermediate layer enables substrate removal without requiring complex processing steps, simplifying the overall approach compared to alternative methods.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly improves the photon-extraction efficiency and external quantum efficiency of UV LEDs by reducing substrate absorption and refractive index effects, leading to higher wall-plug efficiencies and extended device lifetimes.

Implementation Method 1

the release layer having an absorption band corresponding to a first wavelength of light... absorption of the light by the release layer results in separation

Methodology Applied
Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Data Source

PatentUS11355664B2Aluminum nitride substrate removal for ultraviolet light-emitting devices
Publication Date: 2022.06.07 CRYSTAL IS INC
  • US11355664B2 patent drawing
  • US11355664B2 patent drawing
  • US11355664B2 patent drawing

AI summary

In various embodiments, extraction efficiency of light-emitting devices fabricated on aluminum nitride substrates is enhanced via removal of at least a portion of the substrate.