Al-Ni-La Sputtering Target Splash Control
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Solution Overview
Problem
Existing Al-based alloy sputtering targets, particularly those using the Al--Ni--La system, face challenges in reducing initial splashes during the sputtering process, which lead to defects in flat panel displays and increased production costs due to the inefficiency of existing splash inhibition technologies.
Innovation Solution
The development of an Al--Ni--La system sputtering target with controlled particle size distributions of Al--Ni and Al--La intermetallic compounds, where the Al--Ni system intermetallic compound occupies 70% of the target area with an average particle diameter of 0.3 to 3 μm and the Al--La system intermetallic compound occupies 70% with an average diameter of 0.2 to 2 μm, produced through a process involving gas atomization and densification, effectively inhibiting initial splashes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If sputtering power is increased to increase the depositing rate, then productivity is improved, but initial splashes are generated causing defects
Solution Approach 1:
The invention applies preliminary action by controlling the particle size distribution of intermetallic compounds in the target material before sputtering begins. By pre-establishing a specific microstructure with 70-90% of intermetallic compounds in the 0.3-3μm range, the target is prepared in advance to resist splash generation during high-power sputtering, enabling high depositing rates without initial splash defects
Solution Approach 2:
The invention applies parameter changes by modifying the physical parameters of the target material - specifically the particle size distribution of intermetallic compounds. By changing the microstructural parameters (particle size 0.3-3μm, area ratio 70-90%) rather than operating parameters, the target enables high-power sputtering without generating initial splashes, thus achieving high productivity without defects
2Object-affected harmful factors
If existing splash inhibition technologies are used, then splash generation is reduced, but production cost increases due to process inefficiency
Solution Approach 1:
The invention applies parameter changes by establishing specific microstructural parameters in the target material - intermetallic compound particle size (0.3-3μm) and area ratio (70-90%). This material parameter change inherently suppresses splash generation during sputtering, eliminating the need for complex process controls or additional inhibition technologies, thereby reducing production costs while maintaining ease of manufacture
Solution Approach 2:
The invention applies self-service by designing the target material to automatically inhibit splash generation through its inherent microstructure. The controlled distribution of intermetallic compounds enables the target to self-regulate against splash formation during high-power sputtering, eliminating the need for external splash inhibition mechanisms or complex process interventions, thus simplifying manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces initial splashes during sputtering, enhancing the yield and operational performance of flat panel displays by minimizing surface irregularities and non-conductive inclusions, thereby improving the quality of deposited films.
Implementation Method 1
a sputtering method that uses a sputtering target has been adopted. According to a sputtering method, plasma discharge is generated between a substrate and a sputtering target (target material) constituted of a thin film material, a gas ionized by the plasma discharge is brought into collision with the target material to knock out atoms of the target material to deposit on the substrate to produce a thin film
Implementation Method 2
gas atomizing the melt of the Al-based alloy at a gas/metal ratio of 6 Nm3/kg or more to miniaturize the Al-based alloy
Implementation Method 3
densifying the Al-based alloy preform by means of a densifying means to obtain a dense body
Data Source
AI summary
The invention relates to an Al—Ni—La system Al-based alloy sputtering target where a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al—La system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—La system intermetallic compound is 70% or more in terms of an area fraction.