AlON Sidewall Passivation for Miniaturized Red Micro-LEDs

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Solution Overview

Problem

Miniaturization of LEDs diminishes their luminescence efficiency, particularly when emitting red light in the 610 nm to 650 nm wavelength range.

Innovation Solution

A semiconductor light-emitting device with a light-emitting stack structure and a first passivation layer made of aluminum oxynitride (AlON) is used, which enhances luminescence efficiency and protects the device from external damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the LED is miniaturized to micro or nano size, then the device can be applied to micro LED displays, but the luminescence efficiency diminishes

Engineering Contradiction:

ImproveLED sizeVSAvoidluminescence efficiency

Core Design Contradiction:

Volume of moving objectVSLoss of energy

Solution Approach 1:

The patent applies local quality by providing a passivation layer specifically on the side surface of the light-emitting stack structure. This localized treatment addresses the surface defect problem at the critical side surface region where miniaturization causes increased surface-to-volume ratio and surface defects, without altering the overall device structure. The passivation layer is selectively positioned to protect the active region from surface defects while maintaining the miniaturized form factor.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent employs composite materials by using aluminum oxynitride (AlON) as the passivation layer material. AlON combines the properties of both aluminum oxide and aluminum nitride, providing superior chemical stability, mechanical strength, and surface defect passivation capability. This composite material approach effectively addresses the luminescence efficiency loss in miniaturized LEDs by providing enhanced protection against surface defects at the nanoscale.

Inventive Principle:

Principle #40Composite materials

2Productivity

If the LED size is reduced, then integration density increases, but surface defects increase due to higher surface-to-volume ratio

Engineering Contradiction:

Improveintegration densityVSAvoidsurface defect density

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The passivation layer is applied specifically to the side surface of the light-emitting stack structure, providing localized protection where surface defects are most critical. This localized treatment addresses the surface defect problem at the miniaturized scale without compromising the integration density achieved through small device dimensions.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The passivation layer is formed as a preliminary protective measure before the device operates. By pre-passivating the side surface with AlON, surface defects are prevented from forming or affecting device performance, addressing the reliability issue before it manifests during operation.

Inventive Principle:

Principle #10Preliminary action

3Ease of manufacture

If conventional passivation materials are used, then manufacturing is simpler, but protection against surface defects is insufficient

Engineering Contradiction:

Improvepassivation layer fabricationVSAvoidsurface defect protection

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

Aluminum oxynitride (AlON) is used as the passivation layer material, combining the chemical stability of aluminum oxide with the surface passivation properties of aluminum nitride. This composite material provides superior protection against surface defects while maintaining compatibility with standard semiconductor manufacturing processes, thus balancing ease of manufacture with enhanced reliability.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The patent specifies precise parameters for the passivation layer including thickness (50-200 nm) and nitrogen content (5-20 at%), optimizing the balance between surface defect protection and manufacturing feasibility. These parameter specifications ensure effective passivation while maintaining compatibility with existing fabrication processes.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of AlON in the passivation layer significantly increases the luminescence efficiency of the semiconductor light-emitting device, particularly for red light emission, while also providing protection against physical and chemical shocks.

Implementation Method 1

the first passivation layer includes aluminum oxynitride (AlON)... the first passivation layer disposed on a side surface of the light-emitting stack structure... significantly increases the luminescence efficiency

Methodology Applied

Scientific EffectSurface defect passivation:

Implementation Method 2

a light-emitting stack structure including a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer... configured to emit light

Methodology Applied

Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS20250169244A1Semiconductor light-emitting device, method of manufacturing the same, and display apparatus including the same

Publication Date: 2025.05.22 SAMSUNG DISPLAY CO LTD

AI summary

A semiconductor light-emitting device includes: a light-emitting stack structure including a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer; and a first passivation layer disposed on a side surface of the light-emitting stack structure.