Alpha-Silicon Carbide Member Plasma Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The high cost and limited plasma resistance of silicon carbide (SiC) members used in plasma processing apparatuses, particularly those using β-SiC, lead to increased production costs and potential chamber contamination issues due to metal impurities when using α-SiC.
Innovation Solution
A silicon carbide member produced using α-SiC with an oxide-based sintering aid comprising Al2O3 and Y2O3, where the total amount of Al2O3 and Y2O3 is between 3 to 15 weight parts, with Y2O3 being one to two times the amount of Al2O3, and sintered at temperatures between 1850°C to 2200°C, resulting in a dense sintered body with improved plasma resistance and reduced metal impurities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If β-SiC is used for SiC members in plasma processing apparatuses, then plasma resistance is improved, but production cost increases and metal impurities may contaminate the chamber
Solution Approach 1:
The invention changes the crystal structure parameter of silicon carbide from β-phase to α-phase, which fundamentally alters the material properties. α-SiC exhibits superior plasma resistance and significantly reduces metal impurity contamination while maintaining structural integrity in plasma processing environments
Solution Approach 2:
The invention creates a composite structure by combining α-SiC particles with specific binders and sintering aids. This composite approach enhances the plasma resistance and reduces metal impurity release compared to pure β-SiC, while maintaining mechanical strength and electrical properties
2Ease of manufacture
If α-SiC is used for SiC members, then production cost is reduced, but plasma resistance and chamber contamination resistance are worsened
Solution Approach 1:
The invention changes the crystal structure parameter of silicon carbide from β-phase to α-phase, which fundamentally alters the material properties. α-SiC exhibits superior plasma resistance and significantly reduces metal impurity contamination while maintaining structural integrity in plasma processing environments
Solution Approach 2:
The invention creates a composite structure by combining α-SiC particles with specific binders and sintering aids. This composite approach enhances the plasma resistance and reduces metal impurity release compared to pure β-SiC, while maintaining mechanical strength and electrical properties
3Manufacturing precision
If sintering temperature is increased to improve density, then manufacturing precision is improved, but energy consumption and risk of metal impurity contamination increase
Solution Approach 1:
The invention changes the crystal structure parameter of silicon carbide from β-phase to α-phase, which fundamentally alters the material properties. α-SiC exhibits superior plasma resistance and significantly reduces metal impurity contamination while maintaining structural integrity in plasma processing environments
Solution Approach 2:
The invention creates a composite structure by combining α-SiC particles with specific binders and sintering aids. This composite approach enhances the plasma resistance and reduces metal impurity release compared to pure β-SiC, while maintaining mechanical strength and electrical properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach enables the production of SiC members with high plasma resistance at a lower cost, improving durability and reducing production costs while maintaining excellent plasma resistance and surface roughness, thus suitable for use in plasma processing apparatuses.
Implementation Method 1
sintered at temperatures between 1850°C to 2200°C, resulting in a dense sintered body
Implementation Method 2
a silicon carbide member produced using α-SiC with an oxide-based sintering aid comprising Al2O3 and Y2O3, where the total amount of Al2O3 and Y2O3 is between 3 to 15 weight parts
Data Source
Figure 1
Figure 2A~2D
Figure 3~4
AI summary
It is an object of the present invention to provide a low cost and durable silicon carbide member for a plasma processing apparatus. A silicon carbide member for a plasma processing apparatus of the present invention is obtained by mixing an α-silicon carbide powder having an average particle size of 0.3 to 3 µm, wherein an amount of metal impurities in the α-silicon carbide powder is reduced to 20 ppm or less, and a sintering aid comprising B4C in amount of 0.5 to 5 weight parts or Al2O3 and Y2O3 in total amount of 3 to 15 weight parts; sintering a mixture of the α-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body.