Alternated Layer Trench Fabrication for Sub-Threshold Electronic Components
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Solution Overview
Problem
Existing methods for manufacturing high-density electronic components on substrates are limited by the inability to achieve dimensions smaller than a certain threshold, particularly in photolithographic etch operations, which restricts the miniaturization of patterns and performance of devices like quantum wires and silicon-based lasers.
Innovation Solution
A method involving the formation of alternated layers of selectively etchable materials on a semiconductor substrate, followed by selective etching to create trenches and filling these with a third material using ALD deposition, allowing for the creation of capacitors and diodes with enhanced dimensions and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithographic etch operations are used to manufacture high-density electronic components, then manufacturing process simplicity is maintained, but the minimum achievable pattern dimension is limited to a certain threshold
Solution Approach 1:
The manufacturing process is segmented into multiple distinct steps: forming openings, forming alternated layers of first and second materials, trimming layer portions, selectively etching, and filling trenches. This segmentation allows each step to be optimized independently, achieving sub-threshold dimensions through precise control of each individual process rather than relying on a single photolithographic step
Solution Approach 2:
The invention transitions from planar photolithographic patterning to three-dimensional layer formation and selective etching. By forming alternated layers of different materials in vertical stacking and then selectively removing portions, the process achieves dimensional precision in the vertical dimension that translates to superior horizontal patterning resolution beyond photolithographic limits
2Manufacturing precision
If alternated layers of selectively etchable materials are formed and selective etching is performed to create trenches, then pattern dimension precision below photolithographic threshold is achieved, but manufacturing process complexity increases
Solution Approach 1:
The second material acts as an intermediary layer that is selectively etchable with respect to both the first material and the substrate. This intermediary enables the selective removal of first material portions to form trenches while preserving the substrate and second material, achieving precise pattern definition through the mediating role of the sacrificial second material layers
Solution Approach 2:
The process exploits changes in material properties, specifically the selective etchability parameter. By choosing materials with different etching rates and selectivities, the process achieves precise dimensional control. The alternated layers of first and second materials have different etching characteristics that enable selective removal and precise pattern formation
3Reliability
If trenches are filled with third material using ALD deposition to form capacitors or diodes, then component performance and capacitance are enhanced, but manufacturing time and process duration increase
Solution Approach 1:
The invention replaces conventional deposition methods with Atomic Layer Deposition (ALD) for filling trenches. ALD provides atomic-level precision and conformal coverage, enabling enhanced component performance through precise control of film thickness and composition. The self-limiting nature of ALD reactions allows for precise dimensional control at the nanometer and sub-nanometer scale
Solution Approach 2:
The process creates composite structures by filling trenches with third material that forms capacitors or diodes within the alternated layer framework. The combination of first material, second material, and third material creates a composite structure with enhanced functional properties, including increased capacitance and current density, that exceed what could be achieved with single-material structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of electronic components with significantly smaller dimensions and increased capacitance or current density, surpassing the limitations of traditional photolithographic methods.
Implementation Method 1
Growths by successive alternated epitaxies of silicon-germanium (SiGe) layers 5, 9, 13 and silicon layers 7, 11, 15 which form on the main upper surface of substrate 1 and on the bottom and the lateral walls of opening 3 are then carried out
Implementation Method 2
Once these growths have been carried out, a chem-mech polishing (CMP) is performed to obtain the structure illustrated in FIG. 1 having a planar main upper surface
Implementation Method 3
selectively etching a portion of the first material to obtain trenches
Implementation Method 4
the third material is deposited by a so-called ALD deposition method
Data Source
AI summary
A method for manufacturing an electronic component on a semiconductor substrate, including forming at least one opening in the substrate; forming in the bottom and on the walls of the opening and on the substrate an alternated succession of layers of a first material and of a second material, the second material being selectively etchable with respect to the first material and the substrate; trimming the layer portions of the first material and of the second material which are not located in the opening; selectively etching a portion of the first material to obtain trenches; and filling the trenches with at least one third material.