Alternating-Depth Trench Gates for Higher Current Density
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Solution Overview
Problem
As semiconductor device sizes decrease, the current density of trench gate semiconductor devices approaches a limit, necessitating an optimized trench gate structure to enhance current density.
Innovation Solution
The proposed solution involves a trench gate semiconductor device with a substrate, an epitaxial layer, and alternating first and second trench gate structures of different depths, which are arranged alternately in a line to improve current density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the device size decreases, then the integration density increases, but the current density approaches a limit
Solution Approach 1:
The gate structure is segmented into multiple trenches with different depths (first trench gate structures and second trench gate structures) arranged alternately. This segmentation allows each trench to contribute differently to the current conduction, optimizing the overall current density without increasing the device footprint.
Solution Approach 2:
The invention introduces depth variation as an additional dimension in the trench gate structure. By creating trenches at different depths (first depth and second depth) within the same planar footprint, the design exploits the vertical dimension to increase the effective current conduction area, thereby improving current density while maintaining compact device size.
2Ease of manufacture
If single-depth trench gates are used, then the manufacturing process is simple, but the current density is limited
Solution Approach 1:
The gate structure is divided into segments of different depths (first trench gate structures and second trench gate structures). This segmentation enables optimized current conduction paths while using standard semiconductor manufacturing techniques such as selective epitaxial growth and alternating implantation, maintaining manufacturing feasibility.
Solution Approach 2:
Different regions of the device have trenches with different depths tailored to local requirements. The first trench gate structures extend to a first depth while the second trench gate structures extend to a second depth, creating locally optimized current conduction zones that enhance overall device performance without requiring completely new manufacturing processes.
Data Source
AI summary
A trench gate semiconductor device having a substrate, an epitaxial layer, at least one first trench gate structure and at least one second trench gate structure. The epitaxial layer is formed on the substrate. The at least one first trench gate structure and the at least one second trench gate structure are formed in the epitaxial layer. The at least one first trench gate structure has a first depth. The at least one second trench gate structure has a second depth. The first depth is greater than the second depth. The at least one first trench gate structure and the at least one second trench gate structure are arranged alternately in a line along a first direction, and the neighboring first trench gate structure and second trench gate structure adjoins each other.