Alternating Magnetron Electromagnetic Assembly for Film Uniformity
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Solution Overview
Problem
Existing magnetron systems face issues with non-uniform film deposition due to aberrations in the electromagnetic field and gradual erosion of the target surface, leading to quality degradation and inconsistency in wafer manufacturing, particularly when dealing with scandium-doped aluminum nitride films.
Innovation Solution
A magnetron system featuring a baseplate assembly with a housing portion and power feedthrough, incorporating an electromagnetic assembly with alternating arrangements of electromagnet and magnet pairs, along with a water jacket assembly for precise control of the magnetic field, and a sputtering target with an annular target shield for electrical isolation, allowing for controlled material deposition and uniform film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional magnetron system with standard electromagnetic assembly is used, then the system structure is simple, but the film deposition uniformity deteriorates due to electromagnetic field aberrations
Solution Approach 1:
The electromagnetic assembly is segmented into multiple electromagnet pairs (first, second, third, and fourth electromagnet pairs) arranged at different angular positions around the sputtering target. Each electromagnet pair can be independently controlled to generate specific magnetic field components, allowing precise correction of field aberrations and achievement of uniform film deposition across the wafer surface.
Solution Approach 2:
Different electromagnet pairs are positioned at specific angular locations (e.g., 0°, 90°, 180°, 270°) to address local field non-uniformities in different regions of the sputtering chamber. This localized control enables targeted correction of electromagnetic field aberrations in specific areas, ensuring overall film uniformity while maintaining manageable system complexity.
2Manufacturing precision
If the target surface is operated for extended periods, then productivity increases, but film deposition uniformity deteriorates due to gradual target erosion
Solution Approach 1:
The magnetic field configuration is made dynamically adjustable through independent control of multiple electromagnet pairs. As the target surface erodes during continuous operation, the electromagnetic field parameters can be modified in real-time to compensate for changes in target geometry, maintaining film deposition uniformity throughout extended production cycles without requiring target replacement.
Solution Approach 2:
The system allows changes in electromagnetic field parameters (current magnitudes, phase relationships) to compensate for target erosion effects. By adjusting these parameters during operation, the system maintains optimal sputtering conditions despite gradual target surface degradation, enabling continuous high-productivity operation while preserving film quality.
3Adaptability or versatility
If scandium-doped aluminum nitride films are deposited, then product functionality is enhanced, but deposition control becomes more difficult due to different sputtering rates
Solution Approach 1:
The electromagnetic assembly enables periodic modulation of magnetic field strength and distribution during the sputtering process. This periodic control allows for precise regulation of plasma density and ion flux to the target surface, achieving consistent sputtering rates for scandium-doped aluminum nitride films despite the complexity of depositing compound materials with multiple elements and different sputtering rates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise control of the magnetic field and material deposition, ensuring uniformity and consistency of films, particularly for scandium-doped aluminum nitride films, by modulating power to each electromagnet pair and maintaining structural integrity under ultra-high vacuum conditions.
Implementation Method 1
an electromagnetic assembly, the electromagnetic assembly being disposed within the housing portion of the baseplate assembly and comprising a plurality of electromagnet pairs and a plurality of magnet pairs
Implementation Method 2
comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order
Implementation Method 3
Sputtering occurs when microscopic molecules are eroded from a solid target surface after being bombarded with energized ions of plasma or gas
Implementation Method 4
The positively charged ions are accelerated towards a negatively charged electrode, i.e., the target surface, and strike the negatively charged electrode with enough force to dislodge and eject molecules from the target surface
Implementation Method 5
a water jacket assembly for precise control of the magnetic field
Implementation Method 6
plasma is created by ionizing a non-reactive gas, typically Argon (Ar) by low-pressure separation of positively charged ions from negatively charged electrons
Data Source
AI summary
The present invention provides a magnetron system, comprising a baseplate assembly. The baseplate assembly defining a housing portion and a power feedthrough. A sputtering target is disposed within the housing portion of the baseplate assembly. An electromagnetic assembly is disposed within the housing portion of the baseplate assembly. The electromagnetic assembly comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order such that at least one electromagnet pair of the plurality of electromagnet pairs is juxtapositioned between two magnet pairs of the plurality of magnet pairs, and at least one magnet pair of the plurality of magnet pairs is juxtapositioned between two electromagnet pairs of the plurality of electromagnet pairs.


