Alternating Orifice Hydroxyl Combustion for Uniform Substrate Oxidation
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Solution Overview
Problem
Current oxidation processes for substrates, particularly those with high aspect ratio memory holes, suffer from non-uniform processing due to rapid quenching of oxidation radicals at high pressures, leading to inadequate penetration and uniformity.
Innovation Solution
A processing chamber with alternating orifices for injecting gases, such as hydrogen and oxygen, to produce hydroxyl radicals at higher pressures, ensuring uniform oxidation by promoting fuel oxidation combustion reactions and improved gas distribution over the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high pressure oxidation processes are used, then oxidation reaction rate is improved, but radicals are quenched or decay rapidly leading to non-uniform processing
Solution Approach 1:
The gas delivery system is segmented into multiple alternating orifices (first orifices for fuel gas, second orifices for oxidant gas) that are spatially distributed across the substrate surface. This segmentation allows localized combustion reactions to occur at multiple discrete points, which then propagate uniformly across the entire substrate, solving the non-uniformity problem while maintaining high pressure conditions
Solution Approach 2:
Different regions of the substrate receive different gas compositions through the alternating orifice pattern. Each local region experiences controlled combustion with specific fuel-to-oxidant ratios, creating locally optimized oxidation conditions that collectively achieve uniform global processing across the entire substrate surface
2Area of stationary object
If high pressure conditions are applied, then gas distribution over substrate is improved, but radical lifetime is reduced due to rapid quenching
Solution Approach 1:
The alternating orifices create a periodic pattern of combustion zones across the substrate. This periodic arrangement ensures that radicals are continuously regenerated at each orifice location as they propagate, effectively extending their useful lifetime and coverage area despite the high pressure environment that would otherwise cause rapid quenching
3Device complexity
If conventional single gas injection is used, then device complexity is low, but oxidation uniformity across substrate is poor
Solution Approach 1:
The single gas injection system is divided into multiple segmented orifices with alternating functions (fuel injection vs. oxidant injection). This segmentation transforms a simple single-point injection into a distributed multi-point system that achieves uniform oxidation across the substrate while maintaining relatively simple device architecture
Solution Approach 2:
The alternating orifices act as intermediaries that mediate between the gas supply system and the substrate surface. By introducing gases through multiple intermediate orifice locations rather than a single point, the system achieves uniform distribution and reaction across the entire substrate area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high pressure radical oxidation processes with maintained conformality, throughput, and oxide quality, achieving uniform oxidation of substrate memory holes with increased radical formation and sustainability.
Implementation Method 1
The controller heats the processing chamber, injects a first gas from the plurality of first orifices, injects a second gas from the plurality of second orifices, and produces a radical as a function of the heat, the first gas, and the second gas.
Implementation Method 2
injects a first gas from the plurality of first orifices, injects a second gas from the plurality of second orifices, and produces a radical as a function of the heat, the first gas, and the second gas
Implementation Method 3
produces a radical as a function of the heat, the first gas, and the second gas
Implementation Method 4
The substrate can be oxidized in a controlled oxidation process to chemically process the substrate. The substrate can be oxidized, for example, by an array of chemicals disposed above and/or below the substrate in the chamber.
Data Source
AI summary
Systems and methods for hydroxyl driven combustion include introducing a first gas via at least a first orifice into a processing chamber having a substrate disposed on a substrate support. A second gas is introduced into the processing chamber via a plurality of second orifices. The plurality of first orifices and the plurality of second orifices are oriented in an alternating pattern such that each second orifice of the plurality of second orifices is at least partially surrounded by at least a first orifice of the plurality of first orifices. A radical is produced as a function of the first gas and the second gas while heating the chamber.