High Purity Alumina Sputtering Target for Film Homogeneity
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Solution Overview
Problem
Current alumina sputtering targets, with a purity of 99.9% (3N), fail to provide excellent insulation resistance and homogeneity in sputtered films, especially as device miniaturization demands thinner films with stricter physical properties, and existing methods do not adequately address film thickness distribution and dielectric breakdown voltage.
Innovation Solution
The development of sputtering targets with alumina sintered bodies of higher purity (not less than 99.99% or 99.999%) and improved relative density and crystal grain size, achieved through hot-press sintering and annealing, to enhance the physical properties of sputtered films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If alumina sintered body with purity of 99.9% (3N) is used, then manufacturing cost is reduced and ease of manufacture is improved, but insulation resistance and homogeneity of sputtered film are insufficient
Solution Approach 1:
The patent changes the purity parameter of alumina sintered body from 99.9% (3N) to 99.99% or higher (4N or higher), and simultaneously optimizes relative density (95-99.5%) and average grain size (3-20 μm) to achieve both high film quality and manufacturability
Solution Approach 2:
The patent specifies different optimal ranges for different parameters: purity ≥99.99%, relative density 95-99.5%, and average grain size 3-20 μm, creating a localized quality specification that balances film performance with manufacturing feasibility
2Manufacturing precision
If higher purity alumina sintered body (99.99% or 99.999%) is used, then insulation resistance and homogeneity of sputtered film are improved, but manufacturing cost and difficulty increase
Solution Approach 1:
The patent optimizes the purity parameter to 99.99% or higher while simultaneously controlling relative density (95-99.5%) and average grain size (3-20 μm) to create a balanced specification that achieves high film quality without excessive manufacturing difficulty
Solution Approach 2:
The patent defines specific optimal ranges for each parameter: purity ≥99.99%, relative density 95-99.5%, and average grain size 3-20 μm, creating a localized quality window that balances performance with manufacturability
3Manufacturing precision
If alumina sintered body with larger grain size is used, then manufacturing is easier and cost is reduced, but film thickness distribution and homogeneity deteriorate
Solution Approach 1:
The patent optimizes the average grain size parameter to 3-20 μm, which is sufficiently small to ensure homogeneous film deposition and good thickness distribution, while remaining practical for manufacturing
Solution Approach 2:
The patent specifies a localized grain size range of 3-20 μm that balances film quality requirements with manufacturing feasibility, avoiding both excessive fineness and coarse grain structures
4Manufacturing precision
If relative density of alumina sintered body is increased, then film quality and insulation resistance are improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent optimizes relative density to 95-99.5%, which provides sufficient density for high film quality and insulation resistance while avoiding the excessive complexity and cost associated with achieving near-theoretical density
Solution Approach 2:
The patent defines a specific relative density range of 95-99.5% that balances film performance with manufacturing practicality, creating an optimal window for sputtering target production
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting sputtered films exhibit excellent insulation resistance, small surface roughness, and homogeneity, ensuring stable electrical properties even in ultrathin films.
Implementation Method 1
an alumina sintered body which has a purity of not less than 99.99% by mass %, a relative density of not less than 98%, and an average grain size of less than 5 μm
Implementation Method 2
an alumina sintered body which has a purity of not less than 99.99% by mass %, a relative density of not less than 98%, and an average grain size of less than 5 μm
Implementation Method 3
Sputtering is a method of depositing a film on a substrate by accelerating ions typically by means of glow discharge so as to hit a sputtering target so that the target ejects a material for the film due to the kinetic energy of the ions
Data Source
AI summary
A sputtering target which is made of an alumina sintered body having a purity of not less than 99.99% by mass %, a relative density of not less than 98%, and an average grain size of less than 5 μm or is made of an alumina sintered body having a purity of not less than 99.999% by mass % and a relative density of not less than 98%. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target.