Oriented Alumina Substrate Grain Control for Epitaxial Pit Reduction
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Solution Overview
Problem
The production of semiconductor devices, such as light-emitting devices, on oriented alumina substrates often results in the formation of pits, leading to defects like current leakage, particularly when thick semiconductor layers are formed, which reduces the yield due to the difficulty in producing devices only on pit-free regions.
Innovation Solution
The use of oriented alumina substrates with crystalline grains having a tilt angle of 1° to 3° and an average sintered grain size of 20 μm or more, which reduces the formation of pits in the semiconductor layers, thereby improving the yield of semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If oriented alumina substrates are used for epitaxial growth of thick semiconductor layers, then the substrate can support large-area device production, but pits form in the semiconductor layers causing current leakage and reducing yield
Solution Approach 1:
The invention changes the physical parameters of the oriented alumina substrate by controlling the tilt angle of crystalline grains (1° to 3°) and the average sintered grain size (20 μm or more). These parameter modifications to the substrate structure reduce pit formation during epitaxial growth, enabling large-area device production with high yield and reliability
2Productivity
If conventional oriented alumina substrates are used, then device production is possible, but pit formation occurs reducing the effective device area and yield
Solution Approach 1:
By modifying the substrate parameters (tilt angle of 1° to 3° and average sintered grain size of 20 μm or more), the invention reduces pit formation during epitaxial growth. This increases the pit-free region area on the substrate, allowing more devices to be produced effectively and improving overall productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The specified substrate properties lead to a significant reduction in pit formation, enhancing the growth of semiconductor layers in the horizontal direction and improving the yield of semiconductor devices like light-emitting devices, solar cells, and power devices.
Implementation Method 1
oriented alumina substrate for epitaxial growth
Data Source
AI summary
An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more.