Aluminum Thin-Film Coating for Nickel Semiconductor Components

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Solution Overview

Problem

Semiconductor manufacturing equipment components made of nickel or nickel alloys degrade due to exposure to hot gases and reactive chemicals, leading to surface and bulk property alterations and defects in semiconductor devices, with existing coatings being insufficiently protective, adhesive, or brittle.

Innovation Solution

A method involving sequential exposure of nickel or nickel alloy components to an aluminum precursor and a reactant to form an aluminum-containing layer, followed by annealing, to create a robust protective coating resistant to harsh deposition conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing coatings are applied to nickel components, then some protection is provided, but the coatings are too thin to be sufficiently protective

Engineering Contradiction:

Improveprotective capabilityVSAvoidcoating thickness

Core Design Contradiction:

ReliabilityVSLength of stationary object

Solution Approach 1:

The patent changes the deposition parameters and material composition to create a thicker, more robust aluminum-containing layer that provides sufficient protection while maintaining adhesion. The annealing process at up to 1000°C transforms the coating structure to enhance its protective properties without compromising thickness.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If existing coatings are applied to nickel components, then some protection is provided, but the coatings adhere poorly to the surface

Engineering Contradiction:

ImproveadhesionVSAvoidcoating application

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies a buffer layer of aluminum-containing material before the main protective coating. This preliminary layer creates a transition zone that enhances adhesion between the nickel substrate and the subsequent aluminum-containing protective layer, ensuring robust bonding while facilitating the manufacturing process.

Inventive Principle:

Principle #10Preliminary action

3Reliability

If existing coatings are applied to nickel components, then some protection is provided, but the coatings are too brittle and reduce component life under stress

Engineering Contradiction:

Improvecoating durabilityVSAvoidcoating brittleness

Core Design Contradiction:

ReliabilityVSStrength

Solution Approach 1:

The patent creates a composite structure consisting of a buffer layer and an aluminum-containing protective layer. This composite design combines materials with complementary properties, where the buffer layer provides flexibility and adhesion while the aluminum-containing layer provides protective durability, resulting in a coating system that resists brittleness under thermal and mechanical stress.

Inventive Principle:

Principle #40Composite materials

4Productivity

If nickel components are exposed to hot gases and reactive chemicals, then semiconductor devices are manufactured, but the nickel components degrade over time

Engineering Contradiction:

Improvemanufacturing capabilityVSAvoidcomponent lifespan

Core Design Contradiction:

ProductivityVSDuration of action of stationary object

Solution Approach 1:

The patent introduces an aluminum-containing protective coating as an intermediary barrier between the nickel component and the harsh process environment (hot gases and reactive chemicals). This intermediate layer protects the nickel substrate from direct exposure to degrading conditions, extending component lifespan while maintaining manufacturing productivity.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The aluminum-containing layer enhances the durability and longevity of semiconductor manufacturing components, protecting them from high temperatures and reactive gases, thereby improving the quality and reliability of semiconductor devices.

Implementation Method 1

sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process

Methodology Applied

Scientific EffectChemical Vapor Deposition: Chemical Vapour Deposition

Implementation Method 2

annealing the semiconductor manufacturing apparatus component at a temperature of up to 1000°C under inert nitrogen flow

Methodology Applied

Scientific EffectAnnealing: Annealing

Data Source

PatentEP4133120B1Method of protecting nickel and nickel containing components with thin films

Publication Date: 2026.02.25 APPLIED MATERIALS INC

Figure 1~2B
Figure 3~4C
Figure 5

AI summary

Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.