Aluminum Electrode Insulation Structure for Humidity Breakdown Resistance

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Solution Overview

Problem

Semiconductor devices are prone to breakdown in high-temperature and high-humidity environments due to moisture-induced electrolysis and oxide formation at the electrode interface, leading to cracks in the insulating layer.

Innovation Solution

Incorporating a protruding portion on the insulating layer surface to hinder the movement of complex ions, thereby reducing electrolysis and oxide formation, and integrating the insulating layer with the protruding portion to enhance breakdown resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a flat insulating layer is used, then the manufacturing process is simple, but moisture-induced electrolysis and oxide formation occur at the electrode interface leading to breakdown

Engineering Contradiction:

Improvebreakdown resistanceVSAvoidinsulating layer structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The insulating layer is designed with a protruding portion that creates a curved surface profile instead of a flat surface. This curvature modifies the electric field distribution at the electrode interface, preventing concentration of electric stress at sharp corners and reducing the likelihood of breakdown initiation. The protruding portion acts as a stress-distributing feature that enhances reliability without requiring complex multi-layer structures.

Inventive Principle:

Principle #14Spheroidality (Curvature)

2Reliability

If the insulating layer is integrated with the protruding portion, then breakdown resistance is enhanced, but the manufacturing process becomes more complex

Engineering Contradiction:

Improvebreakdown resistanceVSAvoidfabrication process

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The protruding portion is integrated directly into the insulating layer as a monolithic structure rather than being added as a separate component. This merging of the insulating function and the stress-distribution function into a single fabricated element simplifies the overall manufacturing process compared to assembling multiple separate parts, while still achieving the enhanced breakdown resistance through the protruding geometry.

Inventive Principle:

Principle #5Merging (Combining)

3Reliability

If aluminum is used in the second electrode, then electrical performance is improved, but electrolysis and oxide formation increase in high-temperature humid environments

Engineering Contradiction:

Improveelectrical performanceVSAvoidmoisture-induced electrolysis and oxide formation

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The protruding portion of the insulating layer serves as an intermediary structure between the aluminum-containing electrode and the external environment. It modifies the interface geometry to prevent direct contact between moisture and the aluminum surface, thereby reducing electrolysis and oxide formation while preserving the electrical performance benefits of aluminum electrode material.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The protruding insulating structure creates a protective environment around the aluminum electrode by preventing moisture access. This effectively creates a localized inert environment that shields the reactive aluminum surface from corrosive atmospheric conditions, reducing harmful chemical reactions while maintaining electrical functionality.

Inventive Principle:

Principle #39Inert atmosphere (Inert environment)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively suppresses breakdowns in semiconductor devices, particularly those using silicon carbide, by preventing ion movement and maintaining structural integrity under high voltage and humid conditions.

Implementation Method 1

Incorporating a protruding portion on the insulating layer surface to hinder the movement of complex ions, thereby reducing electrolysis and oxide formation

Methodology Applied

Scientific EffectPhysical obstruction of ion movement:

Implementation Method 2

moisture-induced electrolysis and oxide formation at the electrode interface

Methodology Applied

Scientific EffectElectrolysis: Electrolysis

Implementation Method 3

moisture-induced electrolysis and oxide formation at the electrode interface

Methodology Applied

Scientific EffectOxidation: Oxidation

Data Source

PatentUS20250311336A1Semiconductor device

Publication Date: 2025.10.02 KK TOSHIBA

AI summary

A semiconductor device according to an embodiment includes a first electrode, a semiconductor layer, a second electrode, a first insulating portion, and a second insulating portion. The semiconductor layer is provided on the first electrode. The second electrode is provided on the semiconductor layer and contains aluminum. The first insulating portion includes a first portion and a second portion. The first portion is provided between the semiconductor layer and an outer peripheral portion of the second electrode. The second portion is provided around the first portion along a first plane perpendicular to a first direction, the first direction being a direction from the first electrode toward the semiconductor layer, the second portion being provided with a protruding portion on an upper surface thereof. The second insulating portion is provided on the outer peripheral portion of the second electrode and on the second portion.