Aluminum Electrode Plating Structure for Reliable Semiconductor Bonding
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Solution Overview
Problem
Existing semiconductor devices face challenges in forming reliable connections between electrodes containing aluminum, as traditional bonding materials like solder do not wet and spread effectively on aluminum-based electrodes, and electroless nickel-gold plating methods can lead to defects if not properly aligned.
Innovation Solution
The semiconductor device incorporates a semiconductor substrate with a first electrode containing aluminum, a second electrode also containing aluminum but separate from the first, and a third electrode made of aluminum oxide on the first electrode. Additionally, a sixth electrode containing nickel and a seventh electrode containing gold are formed on the second electrode using an electroless nickel-gold plating process, ensuring proper bonding and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional solder bonding is used to connect electrodes, then the bonding process is simple, but the solder does not wet and spread effectively on aluminum-based electrodes resulting in poor connection reliability
Solution Approach 1:
The patent introduces an intermediary layer (such as a copper layer or specific coating material) between the aluminum-based electrode and the solder. This intermediary layer acts as a mediator that enables effective wetting and spreading of solder on the aluminum electrode surface, thereby achieving reliable electrical connections without requiring complex surface treatment processes.
2Reliability
If electroless nickel-gold plating is applied to aluminum electrodes, then connection reliability improves, but misalignment during the plating process can cause defects
Solution Approach 1:
The patent applies preliminary protective coatings or masking layers to the aluminum electrodes before the electroless nickel-gold plating process. These preliminary layers are specifically designed to prevent plating solution contamination and ensure precise deposition only on intended areas, thereby avoiding alignment defects and improving manufacturing precision while maintaining connection reliability.
3Temperature
If aluminum-based electrodes are used, then heat dissipation performance is improved, but bonding materials do not wet effectively on the aluminum surface
Solution Approach 1:
The patent employs composite material structures where aluminum-based electrodes are combined with surface treatment layers or coating materials that have both good thermal conductivity and excellent wetting properties for bonding materials. This composite approach allows the electrode to maintain superior heat dissipation performance while the surface layer ensures effective wetting and spreading of bonding materials, thereby resolving the contradiction between thermal performance and bonding effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for reliable electrical connections and improved heat dissipation, enhancing the overall reliability and performance of the semiconductor device by ensuring that both bonding wires and connectors can be securely attached without defects.
Implementation Method 1
electroless nickel-gold plating process
Data Source
AI summary
A semiconductor device according to an embodiment includes a semiconductor substrate; a first electrode provided on the semiconductor substrate, and the first electrode containing aluminum; a second electrode provided on the semiconductor substrate, the second electrode being provided separately from the first electrode, and the second electrode containing aluminum; a third electrode provided on the first electrode, and the third electrode containing aluminum oxide.