Aluminum Nitride Etch Stop Layer for Semiconductor Interconnects
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming reliable devices at increasingly smaller sizes, where the complexity of processing and manufacturing increases due to decreasing feature sizes, leading to difficulties in forming reliable semiconductor devices.
Innovation Solution
The use of a thin etch stop layer made of aluminum nitride, deposited through alternating layers of Al and N atoms, with subsequent treatment to control the atomic percentage and reduce vacancies, prevents metal diffusion and current leakage, enhancing device performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency increases and costs decrease, but manufacturing complexity increases and reliability decreases
Solution Approach 1:
The patent changes the material composition parameters of the etch stop layer by controlling the atomic percentage of Al to Al and N ratio and reducing vacancies through specific deposition processes. This parameter optimization enables the etch stop layer to effectively prevent metal diffusion at scaled dimensions, thereby maintaining device reliability as feature sizes decrease
Solution Approach 2:
The patent uses aluminum nitride as a composite material system with specific stoichiometric control. By precisely controlling the Al to Al and N atomic ratio and reducing vacancies in the aluminum nitride etch stop layer, the material achieves optimal properties for preventing metal diffusion while maintaining the benefits of device scaling
2Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency increases and costs decrease, but processing complexity increases
Solution Approach 1:
The patent optimizes deposition parameters including atomic percentage control and vacancy reduction in the etch stop layer formation process. These parameter changes enable effective metal diffusion prevention with controlled processing steps, managing complexity while maintaining scaling benefits
3Reliability
If etch stop layer prevents metal diffusion, then device reliability improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent establishes specific parameter ranges for the etch stop layer, including Al to Al and N atomic percentage ratios and vacancy concentrations. By defining these parameters within optimal ranges, the patent achieves effective metal diffusion prevention while maintaining feasible manufacturing precision requirements through controlled deposition processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces RC delay time, power consumption, and prevents metal diffusion, thereby improving the reliability and performance of semiconductor devices by controlling the atomic percentage of Al to Al and N in the etch stop layer.
Implementation Method 1
a thin etch stop layer made of aluminum nitride, deposited through alternating layers of Al and N atoms, with subsequent treatment to control the atomic percentage and reduce vacancies, prevents metal diffusion
Implementation Method 2
deposited through alternating layers of Al and N atoms
Data Source
AI summary
Structures and formation methods of a semiconductor device structure are provided. A method includes depositing a first layer including Al atoms to cover a first dielectric layer in a first conductive feature. The method also includes depositing a second layer including N atoms over the first layer. The first layer and the second layer form an etch stop layer including aluminum nitride. The etch stop layer includes vacancies and has an atomic percentage of Al to Al and N. The method also includes filling the vacancies in the etch stop layer with additional N atoms to reduce the atomic percentage of Al to Al and N. In addition, the method includes forming a second dielectric layer over the etch stop layer. The method also includes forming a second conductive feature in the second dielectric layer and the etch stop layer to be connected to the first conductive feature.