Aluminum Nitride Film on Semiconductor Pad Region
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Solution Overview
Problem
Semiconductor devices with pad regions face corrosion issues due to the formation of foreign substances like Al(OH)3 when silicon nitride films are formed on the back surface of the substrate, leading to defects and unreliable connections with conductive members.
Innovation Solution
Forming an aluminum nitride film on the pad region of the semiconductor device, which prevents the formation of corrosive substances and allows for reliable electrical connections even when the silicon nitride film is present on the back surface, ensuring the semiconductor device's integrity over time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a silicon nitride film is formed on the back surface of the semiconductor substrate, then the semiconductor device can be manufactured with standard processes, but corrosion reactions occur leading to foreign substance formation (Al(OH)3) on the pad region
Solution Approach 1:
An aluminum nitride film is introduced as an intermediary layer between the aluminum wiring and the corrosive environment. This intermediate film prevents direct contact between moisture/foreign substances and the aluminum pad region, blocking corrosion reactions while allowing the silicon nitride film to be formed on the back surface using standard processes.
Solution Approach 2:
The aluminum nitride film is formed in advance on the pad region before the device is subjected to conditions that would cause corrosion. This preliminary protective action prevents the formation of foreign substances like Al(OH)3 by creating a barrier that stops corrosive reactions before they can occur.
2Ease of operation
If the pad region is exposed to form connections with conductive members, then electrical connections can be established, but the exposed aluminum surface is susceptible to corrosion and foreign substance formation
Solution Approach 1:
The aluminum nitride film is selectively formed only on the pad region where connections are made, while leaving other aluminum wiring surfaces unprotected or differently treated. This local application provides corrosion protection precisely where the pad region is exposed and connections are established, maintaining connection reliability without interfering with the bonding process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The aluminum nitride film effectively prevents corrosion reactions, maintaining the semiconductor device's functionality and reliability, especially during storage and bonding processes, and is easily broken for electrical conduction without interfering with the connection process.
Implementation Method 1
forming aluminum nitride on the surface of the exposed wiring... prevents the formation of corrosive substances
Implementation Method 2
easily broken for electrical conduction without interfering with the connection process
Data Source
AI summary
Characteristics of a semiconductor device are improved. An opening that exposes a pad region of a top-layer wiring containing aluminum is formed in a protection film over the wiring, and aluminum nitride is formed on a surface of the exposed wiring. Additionally, a silicon nitride film is formed on a back surface of a semiconductor substrate having the wiring. As described above, foreign substances generated over the pad region due to the silicon nitride film on the back surface of the semiconductor substrate can be prevented by providing an aluminum nitride film over the pad region. Particularly, even in a case of requiring time before an inspection step and a bonding step, after a formation step of the pad region, formation reaction of the foreign substances can be prevented in the pad region, and the characteristics of the semiconductor device can be improved.