Substrate Etching Sequence for Corrosion-Free Aluminum Oxide ALE
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Solution Overview
Problem
Plasma-based etching using fluorine-based sources for aluminum oxide in semiconductor manufacturing leads to chamber corrosion and adsorption, making it difficult to perform stable atomic layer etching without damaging the process chamber.
Innovation Solution
A substrate processing method involving the use of chlorine and oxygen-based gases to reform the target layer, followed by a precursor reaction, which avoids the use of fluorine-based sources and minimizes chamber damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If fluorine-based source is used for atomic layer etching of aluminum oxide, then etching capability is improved, but chamber corrosion and adsorption occur making cleaning difficult
Solution Approach 1:
The patent changes the chemical parameters of the etching process by replacing fluorine-based sources with chlorine-based sources (Cl2, HCl, SiCl4, CCl4, BCl3). This parameter substitution eliminates the corrosive and adsorptive harmful effects of fluorine on the chamber while maintaining effective etching capability through the alternative chlorine chemistry pathway.
2Productivity
If fluorine-based source is used for atomic layer etching, then etching performance is improved, but chamber maintenance difficulty increases due to adsorption
Solution Approach 1:
The patent substitutes the chemical composition parameter from fluorine-based to chlorine-based sources, which fundamentally changes the interaction chemistry with the chamber surfaces. This substitution eliminates the problematic adsorption behavior of fluorine compounds while preserving the etching performance through chlorine-based reaction mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables stable atomic layer etching of aluminum oxide without chamber corrosion, maintaining process integrity and efficiency.
Implementation Method 1
forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer
Implementation Method 2
forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer
Data Source
AI summary
A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.