Aluminum Oxide Protective Interfaces for Stable Molybdenum Conductive Layers
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Solution Overview
Problem
Existing semiconductor devices face challenges in improving reliability and productivity, particularly in the formation of conductive layers within three-dimensional memory devices, where issues such as corrosion and resistance increase due to impurities in the manufacturing process.
Innovation Solution
A method involving the formation of a protective layer containing carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer, followed by the deposition of a molybdenum conductive layer, using specific gas treatments to enhance the adhesion and reduce impurity effects, thereby promoting efficient conductive layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional conductive layer formation process is used, then the manufacturing process is simple, but corrosion and resistance increase due to impurities
Solution Approach 1:
The patent applies preliminary action by forming a protective layer containing carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer before depositing the molybdenum conductive layer. This preparatory step prevents corrosion and reduces resistance by eliminating impurity effects, thereby improving conductive layer stability without significantly complicating the overall manufacturing process
Solution Approach 2:
The protective layer acts as an intermediary between the aluminum oxide layer and the molybdenum conductive layer. This intermediate layer promotes efficient conductive layer formation by preventing direct harmful interactions and reducing impurity incorporation, thus improving reliability while maintaining process feasibility
2Manufacturing precision
If gas treatment is applied to reduce impurities, then resistance decreases and adhesion improves, but the manufacturing process time increases
Solution Approach 1:
The gas treatment is performed as a preliminary action before conductive layer deposition to modify the aluminum oxide layer surface. By pre-treating the surface with carbon, nitrogen, or sulfur containing gases, the process achieves better adhesion and lower resistance in the final conductive layer, while the time investment is made once rather than repeatedly
Solution Approach 2:
The patent employs parameter changes by controlling the composition and conditions of the gas treatment process. By optimizing the gas composition (carbon, nitrogen, or sulfur) and treatment parameters, the process achieves significant improvements in conductive layer quality with minimal time investment, balancing manufacturing precision and production efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and productivity of semiconductor devices by reducing corrosion and resistance, ensuring stable conductive layer formation and improved electrical isolation, thus improving the performance of three-dimensional memory devices.
Implementation Method 1
containing one of carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer
Implementation Method 2
supplying a gas containing one of carbon, nitrogen, and sulfur to the aluminum oxide layer
Data Source
AI summary
According to one embodiment, a semiconductor device includes: a stacked body including an insulating layer, and a conductive layer containing molybdenum; an aluminum oxide layer provided between the insulating layer and the conductive layer; and a protective layer in contact with the aluminum oxide layer, containing one of carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer, and also in contact with the conductive layer.