Aluminum-Plated Semiconductor Components for Corrosion Resistance
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Solution Overview
Problem
Semiconductor material processing apparatuses face challenges in minimizing particle and metal contamination due to wear and corrosion from corrosive and erosive process gases and plasma, which existing components are not adequately resistant to.
Innovation Solution
The use of high-purity aluminum plating with an optional anodized layer on components of semiconductor material processing apparatuses, providing a wear-resistant surface that resists physical and chemical attack, including corrosion and erosion, by forming a substrate with an intermediate layer and electrodepositing aluminum on conductive surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional components are used in semiconductor processing chambers, then manufacturing simplicity is maintained, but wear resistance and corrosion resistance are insufficient leading to particle and metal contamination
Solution Approach 1:
The patent applies composite materials by combining multiple layers with distinct functions: a corrosion-resistant alloy substrate (e.g., Inconel 625) provides structural integrity and resistance to corrosive gases, while a deposited aluminum layer (5-50 microns thick) provides wear resistance and low particle generation. This composite structure resolves the contradiction by achieving superior reliability through material combination rather than relying on a single material's limitations.
Solution Approach 2:
The patent implements preliminary action through pre-treatment steps before aluminum deposition, including surface cleaning, activation, and optional intermediate layer formation. These preliminary actions ensure optimal adhesion and performance of the aluminum coating, preventing premature failure that would require complex replacement mechanisms, thus maintaining manufacturing simplicity while improving wear resistance.
2Reliability
If conventional components are used in semiconductor processing chambers, then device complexity is minimized, but corrosion resistance is insufficient leading to metal contamination
Solution Approach 1:
The patent uses composite materials where the substrate (e.g., Inconel 625, Hastelloy C-276) provides exceptional corrosion resistance to corrosive process gases, while the aluminum coating layer provides wear resistance. This multi-layer composite approach achieves superior corrosion resistance without requiring overly complex component designs, as each layer is optimized for its specific function.
Solution Approach 2:
The patent applies parameter changes by carefully controlling the thickness of the aluminum layer (5-50 microns) and the composition of the substrate alloy. By optimizing these parameters, the system achieves adequate corrosion and wear resistance without requiring excessive material thickness or complex multi-layer structures, thus balancing reliability with manufacturing simplicity.
3Reliability
If high-purity aluminum plating is applied to components, then transition metal contamination is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent introduces an intermediate layer between the substrate and the aluminum plating in certain embodiments. This intermediate layer acts as a mediator that facilitates adhesion between the substrate and aluminum while allowing the aluminum to be applied as a relatively thin, high-purity layer (5-50 microns). This approach reduces transition metal contamination risks while keeping the manufacturing process manageable through standardized deposition techniques.
Solution Approach 2:
The patent optimizes the aluminum layer thickness parameter (5-50 microns) to achieve the right balance between contamination reduction and manufacturing feasibility. By controlling this parameter, the system ensures sufficient aluminum coverage to prevent substrate material contamination while keeping deposition time and material cost reasonable, thus maintaining ease of manufacture.
4Reliability
If aluminum plating with anodized layer is applied, then wear resistance is enhanced, but manufacturing complexity and process time increase
Solution Approach 1:
The patent applies partial action by providing the aluminum layer in a thickness range (5-50 microns) that is sufficient for wear resistance without requiring the maximum possible thickness. This partial application achieves adequate wear protection while significantly reducing deposition time compared to thicker coatings, thus balancing reliability with manufacturing efficiency.
Solution Approach 2:
The patent implements preliminary surface preparation steps (cleaning, activation, and optional intermediate layer formation) that ensure optimal adhesion and wear resistance of the aluminum coating. By performing these preliminary actions correctly, the system achieves durable wear resistance without requiring excessive aluminum thickness or repeated coating cycles, thus reducing overall manufacturing time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The aluminum-plated components significantly reduce transition metal contamination and enhance the resistance of components to corrosive gases and plasma, ensuring the integrity and cleanliness of semiconductor processing chambers.
Implementation Method 1
a high-purity, electrodeposited aluminum plating on the first surface of the substrate or on the second surface of the optional intermediate layer
Implementation Method 2
an anodized layer formed on the aluminum plating
Data Source
AI summary
Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.