Ambipolar Channel Non-Volatile Memory Device Design
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Solution Overview
Problem
Current non-volatile memory devices lack efficient transconductance switching mechanisms for ambipolar channels, limiting their performance and density in memory storage applications.
Innovation Solution
A non-volatile memory device design featuring a substrate with word lines, ferroelectric patterns, a blocking insulating film, and bit line pairs, where the channel pattern exhibits ambipolar conduction characteristics, allowing for transconductance switching without a selection element or additional write electrode, utilizing materials like Dirac semimetal and graphene.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional memory device structures are used, then device complexity is maintained at standard levels, but memory density and switching speed are limited
Solution Approach 1:
The patent merges the selection transistor and storage element into a single unified structure where the ambipolar channel serves both functions. The ferroelectric pattern integrated with the channel pattern eliminates the need for separate selection transistors, achieving higher density without proportionally increasing complexity
Solution Approach 2:
The ambipolar channel pattern serves multiple functions simultaneously: it acts as the conduction path, the storage element interface, and the selection mechanism. This multi-functionality reduces the number of required components while maintaining full memory operation capabilities
2Reliability
If additional write electrodes or selection elements are added to improve switching control, then switching precision improves, but device complexity and power consumption increase
Solution Approach 1:
The ambipolar channel inherently provides the selection function through its unique conduction characteristics. By applying voltage to the word line, the channel automatically switches between conduction states based on the ferroelectric polarization state, eliminating the need for external selection electrodes or complex write circuits
3Speed
If conventional channel materials are used, then manufacturing is straightforward, but switching speed and transconductance are limited
Solution Approach 1:
The patent employs composite material structures for the channel pattern, combining materials with high mobility characteristics and ambipolar properties. This composite approach enables fast switching speeds while maintaining compatibility with existing semiconductor manufacturing processes through established deposition and patterning techniques
4Quantity of substance
If ferroelectric patterns are integrated with word lines, then memory density increases, but manufacturing precision requirements increase
Solution Approach 1:
The ferroelectric pattern is nested within or integrated with the word line structure, with the channel pattern nested within the bit line pair structure. This nested arrangement maximizes space utilization and achieves high density while using standard photolithography alignment processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables random access memory storage with increased density and fast switching times, reducing power consumption and simplifying the memory cell structure by measuring transconductance changes for accurate memory state reading.
Implementation Method 1
a plurality of ferroelectric patterns respectively provided on the word lines
Implementation Method 2
the channel pattern has an ambipolar conduction characteristic
Implementation Method 3
measuring a degree of change in a channel current while changing a voltage applied to the word line
Implementation Method 4
a blocking insulating film covering the ferroelectric patterns
Data Source
AI summary
Provided are a non-volatile memory device and a method of operating the same. The non-volatile memory device includes a substrate, a plurality of word lines extending in a first direction on the substrate, a plurality of ferroelectric patterns respectively provided on the word lines, a blocking insulating film covering the ferroelectric patterns, a plurality of bit line pairs including a first bit line and a second bit line extending in a second direction crossing the word lines and the ferroelectric patterns on the blocking insulating film and intersecting the first direction, and a channel pattern provided between the first bit line and the second bit line of each of the bit line pairs on the blocking insulating film, wherein the channel pattern has an ambipolar conduction characteristic.