Ambipolar Organic Transistor Dual-Interface Charge Balancing

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Solution Overview

Problem

Existing electroluminescent organic transistors face limitations in light intensity and efficiency due to charge accumulation and quenching phenomena at single interfaces between organic semiconductor layers and dielectric layers, which restricts the thickness of the semiconductor layer and results in reduced brightness and charge balancing control.

Innovation Solution

An electroluminescent organic transistor design featuring two control electrodes on each side of the device, allowing for a transversal electric field across the organic semiconductor layer for radiative recombination and optimized charge transport, enabling charge balancing and increased light intensity by exploiting both interfaces of the organic semiconductor layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If charge accumulation and radiative recombination occur at a single interface between organic semiconductor layer and dielectric layer, then device structure is simplified, but light intensity is limited and exciton quenching occurs

Engineering Contradiction:
Improvedevice structureVSAvoidlight intensity
Core Design Contradiction:
Device complexityVSIllumination intensity

Solution Approach 1:

The patent transitions from a single-interface charge accumulation model to a dual-interface model by positioning control electrodes on both sides of the organic semiconductor layer. This dimensional expansion allows charge accumulation and radiative recombination to occur at two distinct interfaces simultaneously, thereby increasing the effective light-generating volume and intensity without compromising structural simplicity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Object-affected harmful factors

If semiconductor layer thickness is limited to a few molecular layers to avoid exciton quenching, then quenching is reduced, but light emission intensity decreases

Engineering Contradiction:
Improveexciton quenchingVSAvoidlight emission intensity
Core Design Contradiction:
Object-affected harmful factorsVSIllumination intensity

Solution Approach 1:

The patent segments the charge accumulation regions into two separate interfaces: one between the organic semiconductor layer and the first dielectric layer, and another between the organic semiconductor layer and the second dielectric layer. This segmentation distributes exciton generation across multiple locations, reducing the concentration of excitons at any single interface and thereby minimizing quenching while collectively enhancing light emission intensity

Inventive Principle:
Principle #1Segmentation

3Device complexity

If only two control electrodes are used (one above and one below semiconductor layer), then device complexity is reduced, but charge balancing control is limited

Engineering Contradiction:
Improvecontrol electrode configurationVSAvoidcharge balancing control
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent introduces control electrodes on both sides of the organic semiconductor layer, creating a four-electrode configuration that adds a new dimension to charge balancing control. This allows independent modulation of charge accumulation at each interface, providing superior control over charge balance and exciton generation compared to traditional two-electrode configurations

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances light intensity and efficiency by reducing exciton quenching and maximizing current density, allowing for effective charge balancing and improved light emission across the entire thickness of the organic semiconductor layer.

Implementation Method 1

at least one organic ambipolar semiconductor layer (10), suitable for the transport and the radiative recombination of charges of a first type, for example electrons, and of a second type, for example holes

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS8729540B2Electroluminescent organic transistor
Publication Date: 2014.05.20 USINVEST LLC
  • US8729540B2 patent drawing
  • US8729540B2 patent drawing

AI summary

The present invention relates to a field effect electroluminescent ambipolar organic transistor in which there are two couples of control electrodes, a layer of ambipolar organic semiconductor in direct contact with the source and the drain electrode and two separate dielectric layers, and wherein said dielectric layers are each arranged between the ambipolar organic semiconductor layer and a couple of control electrodes.