Ambipolar Transistor with SiOC Gate Insulator for High Sensitivity
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Solution Overview
Problem
Conventional semiconductor sensors face challenges such as increased resistance, leakage current, and limited size due to electrode and sensor material proximity, noise amplification, and inability to measure particles smaller than 300 nm, leading to reduced sensitivity and reliability, especially in real-time ultra-fine dust sensing.
Innovation Solution
An ambipolar transistor utilizing a SiOC thin film as a gate insulating layer with alternating source and drain sub-terminals connected in series, which generates diffusion current to enhance sensitivity while preventing leakage current, allowing for real-time measurement of particle concentration and cost-effective mass production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the sensor material is in close contact with the electrode to increase sensitivity, then the sensitivity is improved, but the contact resistance increases and leakage current is generated
Solution Approach 1:
The patent introduces a gate insulating film as an intermediary layer between the electrode and sensor material. This insulating film prevents direct contact between the electrode and sensor material, thereby eliminating leakage current and reducing contact resistance while maintaining sensitivity through the gate control mechanism
Solution Approach 2:
The patent replaces the direct mechanical contact between electrode and sensor material with an electric field control mechanism through the gate insulating film. Instead of relying on physical contact for signal transduction, the system uses field-effect control to modulate current flow, eliminating the need for direct contact
2Measurement precision
If a heater is attached under the substrate to increase sensitivity, then the sensitivity is improved, but the device size cannot be reduced and overcurrent discharge risk increases
Solution Approach 1:
The patent extracts and removes the heater component from the sensor system. By eliminating the heater, the device size is reduced, device complexity is lowered, and the risk of overcurrent discharge is eliminated while maintaining sensitivity through the ambipolar transistor's inherent sensitivity enhancement mechanisms
Solution Approach 2:
The patent enables the sensor to achieve sensitivity enhancement without external heating assistance. The ambipolar transistor structure itself provides the necessary sensitivity through its unique current modulation characteristics, making the system self-sufficient and eliminating the need for separate heating components
3Measurement precision
If a separate embedded system is used to amplify sensed current and block leakage current, then sensitivity is improved, but noise is amplified
Solution Approach 1:
The patent implements preliminary action by blocking leakage current at its source through the gate insulating film structure, rather than attempting to filter or cancel it later in the signal processing chain. This prevents both leakage current and associated noise from entering the amplification stage
Solution Approach 2:
The patent converts the potential harm of leakage current into a beneficial control mechanism. By using the gate insulating film to control and modulate the current flow, the system transforms what would be a harmful leakage current into a controllable signal that enhances sensitivity while maintaining low noise levels
4Measurement precision
If MEMS-based particle chips are used for ultra-fine dust sensing, then sensitivity is improved, but reliability deteriorates due to multiple complex processes
Solution Approach 1:
The patent segments the complex multi-step MEMS process into a simplified integrated structure. The ambipolar transistor design combines multiple functions (sensing, signal amplification, leakage current blocking) into a single integrated device, eliminating the need for separate dust collecting, filtering, sorting, and charging processes
Solution Approach 2:
The patent implements multi-functionality by designing the ambipolar transistor to simultaneously perform sensing, signal amplification, and leakage current blocking functions. This universal design eliminates the need for multiple separate components and processes, thereby improving reliability while maintaining sensitivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ambipolar transistor design increases sensor sensitivity, prevents leakage current, and enables real-time measurement of particle concentrations in the THz range, improving the reliability and cost-effectiveness of electronic sensors.
Implementation Method 1
an ambipolar transistor with negative resistance using a leakage current cutoff insulating film, a high-sensitivity electronic sensor using fine diffusion current
Data Source
AI summary
Disclosed are an ambipolar transistor and a high-sensitivity electronic sensor using the same. The ambipolar transistor includes: a substrate; a gate formed on the substrate; a gate insulating film formed of an SiOC thin film and disposed on the substrate and the gate; and a source portion and a drain portion formed on the gate insulating film and spaced apart from each other, wherein the source portion and the drain portion comprise: a main source terminal and a main drain terminal disposed on the gate insulating film at right and left sides of the gate, respectively; and a plurality of source sub-terminals and a plurality of drain sub-terminals alternately arranged between the main source terminal and the main drain terminal, respectively.