Resist Underlayer Composition Using Amide Solvent for Uniform Coating
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Solution Overview
Problem
Conventional resist underlayer film-forming compositions face challenges with limited solubility in traditional solvents, leading to poor coatability and film uniformity, especially on substrates with height and density variations, and struggle to achieve high etching and heat resistance simultaneously.
Innovation Solution
A resist underlayer film-forming composition is developed using a polymer dissolved in a novel solvent represented by Formula (1), which includes a compound with specific alkyl groups, enhancing solubility and incorporating a crosslinking agent, acid, and/or acid generating agent to improve coatability and film properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If conventional solvents (PGMEA, cyclohexanone) are used to dissolve polymer for resist underlayer film-forming composition, then good spin coatability is achieved, but etching resistance and heat resistance are insufficient
Solution Approach 1:
The patent changes the chemical parameters of the solvent system by introducing amide solvents (N-methyl-2-pyrrolidone, N,N-dimethylformamide) with specific molecular structures and properties. These amide solvents have higher polarity and different solvation capabilities compared to conventional esters and ketones, enabling dissolution of polymers with improved etching and heat resistance while maintaining spin coatability
Solution Approach 2:
The patent creates a composite solvent system combining amide solvents with conventional resist components (polymers, crosslinking agents, acid generating agents). This composite approach allows the composition to achieve multiple functions: good solubility for spin coating, high etching resistance, and heat resistance for hardmask formation
2Reliability
If polymer with high etching resistance and heat resistance is used, then resist underlayer film performance is improved, but solubility in conventional solvents is limited
Solution Approach 1:
The amide solvent acts as an intermediary substance that bridges the gap between the polymer requiring high performance and the coating process requiring good solubility. The amide solvent's specific chemical properties enable it to dissolve high-performance polymers that are insoluble in conventional solvents, facilitating both manufacturing and final performance
3Manufacturing precision
If resist underlayer film-forming composition is designed for high performance, then film uniformity on stepped substrates improves, but coatability to substrates with height and density variations deteriorates
Solution Approach 1:
The patent modifies the physical parameters of the composition by using amide solvents with specific viscosity and surface tension characteristics. These parameter changes enable the composition to flow and level better on stepped substrates, improving coatability while maintaining film uniformity after embedding
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves excellent spin coatability, high etching resistance, and heat resistance, resulting in a flat film with minimal thickness variation, suitable for advanced lithography processes and semiconductor device production.
Implementation Method 1
a polymer and a compound represented by Formula (1) as a solvent... such a polymer... has a limited solubility to the conventionally used solvents
Implementation Method 2
a resist underlayer film-forming composition is preferably coated to form a film on a semiconductor substrate by using a spin coater... achieves excellent spin coatability
Implementation Method 3
a polymer resin, a crosslinking agent, a crosslinking catalyst... which are the major components of the resist underlayer film-forming composition
Data Source
AI summary
A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent.In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.