Amidinate Lanthanide Thin-Film Precursors for Low-Leakage Dielectrics
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Solution Overview
Problem
Existing semiconductor technologies face limitations in forming high-quality thin films due to the use of silicon-based dielectrics, which lead to increased leakage current and degradation, necessitating the development of precursors with improved chemical properties for thin film formation.
Innovation Solution
A precursor for forming lanthanide metal-containing thin films is developed, characterized by a compound with amidinate ligands, exhibiting high heat resistance and volatility, allowing for the formation of high-quality thin films through processes like CVD and ALD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon-based dielectrics are used in capacitor structures, then manufacturing is simplified, but leakage current increases and device degradation occurs
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric material from silicon-based to lanthanide metal-based compounds. Specifically, it uses precursors containing lanthanide metals (such as europium, terbium, dysprosium) combined with organic ligands like beta-diketonate, bis(trimethylsilyl)amide, cyclopentadienyl, and amidinate. This compositional change fundamentally alters the electrical properties, achieving lower leakage current and reduced degradation while maintaining manufacturing feasibility through established thin-film deposition techniques.
Solution Approach 2:
The patent employs composite material structures by combining lanthanide metal centers with organic ligand systems. The precursors are designed as complex compounds where lanthanide metals are coordinated with multiple types of ligands (e.g., mixtures of beta-diketonate and amidinate). This composite approach leverages the high dielectric constant of lanthanide oxides while the organic ligands provide volatility and thermal stability, creating a material that satisfies both electrical performance and processing requirements.
2Reliability
If high-dielectric thin films are applied to replace silicon-based dielectrics, then leakage current is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent introduces organic ligand intermediaries (beta-diketonate, bis(trimethylsilyl)amide, cyclopentadienyl, amidinate) that mediate between the lanthanide metal center and the deposition process. These ligands serve as carriers that enable the lanthanide metals to be delivered in volatile, thermally stable precursor forms suitable for CVD and ALD. The ligands decompose controllably during deposition, leaving behind the desired lanthanide oxide or oxynitride thin film, thus simplifying the manufacturing process while achieving high-dielectric, low-leakage films.
Solution Approach 2:
The patent optimizes multiple parameters of the precursor compounds including molecular weight, volatility, thermal stability, and ligand composition to enable low-temperature deposition processes. By adjusting these parameters, the precursors can be deposited at temperatures compatible with existing semiconductor manufacturing equipment and substrate materials, reducing manufacturing complexity while maintaining the high-dielectric properties of the resulting thin films.
3Productivity
If lanthanide metal precursors with high vapor pressure are used, then thin film formation is improved, but heat resistance decreases
Solution Approach 1:
The patent creates composite precursor molecules combining lanthanide metal centers with thermally stable organic ligand frameworks. The ligands (particularly amidinate and cyclopentadienyl types) are selected for their high thermal stability, which compensates for the volatility requirements. This composite structure allows the precursor to maintain integrity at elevated temperatures during deposition while still providing sufficient vapor pressure for effective film formation, resolving the contradiction between volatility and heat resistance.
Solution Approach 2:
The patent merges multiple ligand types around a single lanthanide metal center to achieve synergistic properties. For example, combining beta-diketonate ligands (which provide volatility) with amidinate ligands (which provide thermal stability) creates a hybrid precursor that simultaneously satisfies both vapor pressure and heat resistance requirements. This merging of functional ligands into a single molecular complex enables the precursor to exhibit both high volatility for good film formation and high heat resistance for process stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The precursor enables the formation of high-quality lanthanide metal-containing thin films with excellent structural stability and volatility, suitable for semiconductor devices, enhancing their performance.
Implementation Method 1
forming a precursor thin film through deposition of the precursor for forming the thin film onto a surface of the substrate
Implementation Method 2
The process of forming the precursor thin film may include a process of vaporizing the precursor for forming the thin film so as to transfer the resulting vapor of the precursor into a chamber
Implementation Method 3
reacting the precursor thin film with a reactant
Implementation Method 4
The process of forming the lanthanide metal-containing thin film on the substrate may include a process of feeding the precursor for forming the thin film onto the substrate and applying a plasma, thereby forming the thin film
Implementation Method 5
allowing for the formation of high-quality thin films through processes like CVD and ALD
Data Source
AI summary
Proposed are a precursor for forming a lanthanide metal-containing thin film, the precursor including a compound represented by Chemical Formula 1, a method for forming a lanthanide metal-containing thin film using the same, and a semiconductor device including the lanthanide metal-containing thin film. The precursor for forming the thin film contains an amidinate ligand and thus exhibits chemical properties, such as high heat resistance and high volatility, thereby enabling the formation of a high-quality thin film.