Amidine Copper Compound for Low-Temperature CVD Thin Films
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Solution Overview
Problem
Conventional raw materials for forming metal-containing thin films have high melting points and low vapor pressures, limiting their suitability for high-quality film production and productivity in chemical vapor deposition methods.
Innovation Solution
A novel compound represented by General Formula (1), with specific alkyl and alkanediyl groups, is developed, which has a low melting point and high vapor pressure, enabling its use in chemical vapor deposition and atomic layer deposition methods, particularly for forming cobalt-containing thin films that can selectively adhere to copper or ruthenium layers on silicon substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional raw materials are used for chemical vapor deposition, then film formation is possible, but the melting point is high and vapor pressure is low, reducing productivity and transportability
Solution Approach 1:
The patent applies parameter changes by modifying the chemical structure of the raw material to achieve a low melting point and high vapor pressure. Specifically, the invention uses a metal compound with a ligand structure containing specific alkyl groups (R1-R4) and an alkanediyl group (A), where the combination of these groups creates a molecular structure that melts at low temperature and vaporizes easily, directly resolving the contradiction between productivity requirements and the inherent high melting point of conventional materials
Solution Approach 2:
The patent employs composite materials by creating a hybrid organic-inorganic compound where a metal center (M) is coordinated with a specially designed organic ligand. This composite structure combines the desirable properties of both components: the metal provides the desired film-forming capability while the organic ligand with specific alkyl and alkanediyl groups provides low melting point and high vapor pressure, enabling both high productivity and easy transportability
2Productivity
If conventional raw materials are used for chemical vapor deposition, then film formation is possible, but vapor pressure is low, limiting mass production capability
Solution Approach 1:
The patent applies parameter changes by modifying the chemical structure of the raw material to achieve a low melting point and high vapor pressure. Specifically, the invention uses a metal compound with a ligand structure containing specific alkyl groups (R1-R4) and an alkanediyl group (A), where the combination of these groups creates a molecular structure that melts at low temperature and vaporizes easily, directly resolving the contradiction between productivity requirements and the inherent high melting point of conventional materials
3Ease of operation
If conventional raw materials are used, then film formation is possible, but transportability is poor, requiring improved handling and logistics
Solution Approach 1:
The patent applies parameter changes by modifying the chemical structure of the raw material to achieve a low melting point and high vapor pressure. Specifically, the invention uses a metal compound with a ligand structure containing specific alkyl groups (R1-R4) and an alkanediyl group (A), where the combination of these groups creates a molecular structure that melts at low temperature and vaporizes easily, directly resolving the contradiction between productivity requirements and the inherent high melting point of conventional materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound allows for the production of high-quality metal-containing thin films with low residual carbon content and improved transportability, enhancing productivity and selectivity in thin film formation processes.
Implementation Method 1
When a metal-containing thin film is foiled on a surface of a substrate by vaporizing a raw material for chemical vapor deposition
Implementation Method 2
When a metal-containing thin film is foiled on a surface of a substrate by vaporizing a raw material for chemical vapor deposition
Implementation Method 3
the chemical vapor deposition (referred to hereinbelow simply as CVD) method, inclusive of an atomic layer deposition (referred to hereinbelow simply as ALD) method
Data Source
AI summary
A raw material for forming a thin film, comprising a compound represented by General Formula (1) below.wherein R1 represents an isopropyl group, R2 represents a methyl group, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.