Amine-Based CMP Cleaning Liquid for Semiconductor Substrates
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Solution Overview
Problem
Existing cleaning liquids for semiconductor substrates after chemical mechanical polishing (CMP) lack storage stability and effective defect suppression performance, particularly for metal films like Cu-, W-, or Co-containing films.
Innovation Solution
A cleaning liquid with an alkaline pH, comprising an amine compound, a chelating agent, and water, where the amine compound content is between 25.5% and 90% and water content is between 10% and 60% by mass, along with optional components like surfactants and reducing agents, to enhance storage stability and defect suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the cleaning liquid is formulated with high amine compound content (25.5-90 mass%) and controlled water content (10-60 mass%), then storage stability is improved, but the formulation complexity increases
Solution Approach 1:
The patent applies parameter changes by optimizing the concentration ranges of amine compounds (25.5-90 mass%) and water (10-60 mass%) to achieve improved storage stability. This quantitative adjustment of formulation parameters directly resolves the technical contradiction by finding the optimal balance point that enhances reliability while managing formulation complexity.
Solution Approach 2:
The cleaning liquid employs a composite formulation combining multiple amine compounds (primary, secondary, or tertiary amines) with chelating agents and controlled water content. This composite approach allows the system to achieve superior storage stability through synergistic interactions between components, while the defined concentration ranges prevent excessive formulation complexity.
2Manufacturing precision
If the cleaning liquid contains amine compounds and chelating agents for defect suppression, then cleaning performance is improved, but the risk of corrosion increases
Solution Approach 1:
The chelating agent serves as an intermediary substance that binds metal ions, preventing them from causing corrosion while maintaining the cleaning effectiveness of the amine compounds. This mediator approach allows the system to achieve defect suppression without proportionally increasing corrosion risk, as the chelating agent mediates the interaction between cleaning agents and metal surfaces.
Solution Approach 2:
The patent optimizes the concentration parameters of amine compounds (25.5-90 mass%) and controls water content (10-60 mass%) to achieve a balance where defect suppression performance is maximized while corrosion risk is managed. By precisely controlling these parameters, the formulation achieves high manufacturing precision without excessive harmful effects.
3Ease of operation
If the cleaning liquid is used in diluted form (500-10000 times dilution), then ease of operation is improved, but the concentration of active ingredients decreases
Solution Approach 1:
The cleaning liquid is prepared in a concentrated form with optimized amine compound (25.5-90 mass%) and water (10-60 mass%) ratios before use. This preliminary preparation of a stable, concentrated formulation allows for easy dilution (500-10000 times) during operation while ensuring that sufficient active ingredients remain effective even after dilution. The preliminary optimization of concentration ranges ensures ease of operation without sacrificing cleaning performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning liquid demonstrates improved storage stability and defect suppression performance, effectively removing residues from semiconductor substrates without causing corrosion, thereby preventing short-circuits and maintaining electrical properties.
Implementation Method 1
a chelating agent; and water, a content of the amine compound is not less than 25.5 mass % and less than 90 mass % based on a total mass of the cleaning liquid
Data Source
AI summary
There is provided a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in storage stability. In addition, there is provided a method of cleaning semiconductor substrates having undergone CMP. The cleaning liquid for semiconductor substrates having undergone CMP shows alkaline properties and contains: an amine compound that is at least one selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, and their salts; a chelating agent; and water. The amine compound content is not less than 25.5 mass % and less than 90 mass % based on the total mass of the cleaning liquid, and the water content is 10 to 60 mass % based on the total mass of the cleaning liquid.