Amine Oxide Hydroxylamine Cleaning Liquid for CMP Metal Films
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Solution Overview
Problem
Existing cleaning liquids for semiconductor substrates after chemical mechanical polishing (CMP) fail to adequately prevent corrosion and suppress defects on metal films, particularly those containing cobalt, copper, or tungsten.
Innovation Solution
A cleaning liquid comprising an amine oxide compound and at least one hydroxylamine compound, with the amine oxide compound content ranging from 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid, is used to effectively clean semiconductor substrates after CMP.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a cleaning liquid containing a hydroxylamine compound is used, then corrosion prevention properties with respect to metal films are excellent, but defect suppression performance with respect to metal films deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning liquid by adding an amine oxide compound to the hydroxylamine compound. This parameter change transforms the cleaning liquid from having good corrosion prevention but poor defect suppression to having both excellent corrosion prevention and defect suppression properties. The specific addition of amine oxide compound at controlled concentrations (0.01-5 mass%) modifies the chemical interaction mechanisms with metal film residues and defects.
Solution Approach 2:
The patent creates a composite cleaning liquid system by combining two different chemical compounds: hydroxylamine compound and amine oxide compound. This composite formulation leverages the complementary properties of both compounds - the corrosion prevention capability of hydroxylamine and the defect suppression capability of amine oxide, achieving synergistic effects that neither compound could achieve alone.
2Ease of manufacture
If conventional cleaning liquids are used for CMP substrates, then cleaning process is simple, but corrosion and defects on metal films cannot be adequately prevented
Solution Approach 1:
The patent modifies the chemical composition parameters of conventional cleaning liquids by adding amine oxide compound at specific concentrations. This parameter change enhances corrosion prevention properties while maintaining the overall simplicity of the cleaning process. The formulation requires only adding 0.01-5 mass% amine oxide to existing hydroxylamine-based cleaning liquids.
3Productivity
If cleaning liquids with higher concentration of cleaning agents are used, then cleaning efficiency is improved, but corrosion prevention properties deteriorate
Solution Approach 1:
The patent changes the concentration parameters and chemical composition of the cleaning liquid by introducing amine oxide compound. This allows the use of lower concentrations of aggressive cleaning agents while maintaining high cleaning efficiency through the synergistic action of amine oxide and hydroxylamine compounds. The amine oxide compound enables effective cleaning at optimized concentrations that also provide corrosion prevention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed cleaning liquid demonstrates excellent corrosion prevention properties and defect suppression performance on metal films, thereby improving the cleaning efficiency for semiconductor substrates.
Implementation Method 1
a cleaning liquid comprising: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound
Data Source
AI summary
An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone a chemical mechanical polishing process, the cleaning liquid being excellent in corrosion prevention properties and defect suppression performance with respect to a metal film. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone a chemical mechanical polishing process. A cleaning liquid of the invention is used for semiconductor substrates having undergone a chemical mechanical polishing process and includes: an amine oxide compound that is a compound having an amine oxide group, or its salt; and at least one hydroxylamine compound selected from the group consisting of a hydroxylamine, a hydroxylamine derivative, and their salts, and the amine oxide compound content is 0.00001 to 0.15 mass % based on the total mass of the cleaning liquid.