Selective Etching via Amine Protective Film Adsorption
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Solution Overview
Problem
Existing etching methods for semiconductor devices face challenges in selectively etching desired films among multiple types of films on a substrate without damaging adjacent films, particularly due to similar etching properties of the films and lack of precise control over the etching process.
Innovation Solution
The method involves supplying a protective film-forming gas, such as an amine gas, to form a protective film on specific films, which are then selectively protected from an etching gas, allowing for the targeted etching of specific films by exploiting differences in amine adsorption properties between the films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching methods are used on multiple films with similar etching properties, then the etching process can be performed, but selective etching of desired films cannot be achieved and adjacent films may be damaged
Solution Approach 1:
A protective film is formed on the surface of the substrate before the etching process begins. This protective film selectively covers the first film based on differences in amine adsorption properties between the first and second films. When etching gas is subsequently supplied, the protective film prevents the etching gas from contacting and damaging the first film, while allowing selective etching of the second film.
Solution Approach 2:
An amine-based protective film acts as an intermediary layer between the etching gas and the film surfaces. The protective film selectively adsorbs amine molecules on the first film surface, creating a barrier that mediates the interaction between the etching gas and the underlying films. This intermediary protective film enables selective etching by controlling which films are exposed to the etching gas.
2Manufacturing precision
If a protective film is formed using amine gas to protect specific films, then selective protection is achieved, but the process complexity increases
Solution Approach 1:
The method exploits differences in amine adsorption properties between different film types as a key parameter. By controlling the adsorption behavior of amine molecules on different film surfaces, the process achieves selective protection. The protective film formation relies on changing the chemical interaction parameters between the amine gas and different film materials, enabling differentiation and selective protection without complex additional equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables selective etching of specific films while preventing adjacent films from being etched, ensuring precise control and reliability in the etching process, thereby improving the accuracy and efficiency of semiconductor device fabrication.
Implementation Method 1
supplying a protective film-forming gas including an amine gas to a substrate having a surface on which a first film and a second film are formed... forming a protective film to cover the first film
Data Source
AI summary
An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.