Amine Resist Composition for EUV Sensitivity and Resolution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing resist compositions used in semiconductor manufacturing face challenges with sensitivity, resolution, and defect reduction, particularly when high-energy rays like EUV are used, which often result in low photon counts and increased noise in pattern formation.
Innovation Solution
The introduction of an amine compound represented by Formula 1, which can generate electrons upon exposure to high-energy rays, enhancing the generation of acids from photoacid generators and improving the sensitivity, resolution, and defect reduction of the resist composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-energy rays (EUV) are used for lithography, then resolution is improved, but sensitivity deteriorates due to low photon counts
Solution Approach 1:
The patent introduces an amine compound as an intermediary substance that mediates between the EUV light and the photoacid generator. The amine compound absorbs EUV photons and transfers energy to the photoacid generator, enhancing acid generation efficiency. This intermediary mechanism compensates for the low photon count of EUV radiation while maintaining high resolution capability.
Solution Approach 2:
The patent modifies the chemical composition parameters of the resist system by incorporating specific amine compounds with optimized molecular structures (Formula 1). By changing the chemical parameters of the resist composition - specifically adding amine compounds with appropriate HOMO levels and molecular weights - the system achieves improved sensitivity without sacrificing the resolution benefits of EUV lithography.
2Reliability
If the amount of photoacid generator is increased to improve sensitivity, then sensitivity is improved, but manufacturing precision deteriorates due to increased noise
Solution Approach 1:
The amine compound acts as a mediator that amplifies the effect of each photon absorbed. By introducing the amine compound, the system achieves enhanced photoacid generation efficiency without needing to increase the photoacid generator concentration. This prevents the noise increase that would otherwise accompany higher photoacid generator amounts.
Solution Approach 2:
The patent creates a composite resist system combining the base resin, photoacid generator, and amine compound in specific ratios. This composite formulation synergistically combines the components to achieve both high sensitivity and high resolution. The amine compound (0.1-10 wt%) works together with the photoacid generator (1-50 wt%) to produce a system where the whole is greater than the sum of its parts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The amine compound improves the sensitivity and resolution of resist patterns while reducing defects, even when used in low doses, thereby optimizing the performance of resist compositions in semiconductor manufacturing processes.
Implementation Method 1
the amine compound represented by Formula 1, which can generate electrons upon exposure to high-energy rays
Implementation Method 2
A chemically amplified resist enables patterning by changing the solubility of a base resin in a developer by reaction of an acid, which is formed by a reaction between light and a photoacid generator, with the base resin again
Data Source
AI summary
Provided are an amine compound represented by Formula 1, a resist composition including the same, and a method of forming a pattern by using the same:wherein detailed descriptions of A11, A12, k11, n11, R11 to R14, b11 and b12 in Formula 1 are provided in the present specification.