Amino-Silyl Amine Precursor for Low-Temperature Silicon Thin-Films
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Solution Overview
Problem
Existing silicon precursors face challenges in forming ultra-fine, uniform, and high-quality silicon-containing thin-films at low temperatures, particularly in next-generation semiconductor and display devices, due to high temperature processes, step coverage issues, and suboptimal physical and electrical properties.
Innovation Solution
A novel amino-silyl amine compound with a Si3N trigonal planar molecular structure, represented by Chemical Formula 1, is developed, which exhibits high thermal stability, low activation energy, and high volatility, allowing for the formation of silicon-containing thin-films with excellent cohesion, high deposition rates, and superior physical and electrical properties at low temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If existing silicon precursors are used, then deposition can be performed, but the process requires high temperature (600°C or more) which is not suitable for next-generation devices
Solution Approach 1:
The patent modifies the molecular structure of silicon precursor compounds by introducing specific amino-silyl amine groups with Si3N trigonal planar configuration. This structural parameter change enables the precursor to decompose and deposit silicon films at lower temperatures (below 600°C) while maintaining film quality, directly resolving the contradiction between deposition temperature and film quality
Solution Approach 2:
The invention creates composite molecular structures combining silicon, nitrogen, and organic groups in a specific Si3N trigonal planar configuration. This composite structure provides both thermal stability for low-temperature processing and reactivity for high-quality film formation, simultaneously achieving low deposition temperature and excellent film properties
2Manufacturing precision
If existing silicon precursors are used, then film deposition is achieved, but step coverage and etching property are insufficient
Solution Approach 1:
The patent changes the molecular parameters of the silicon precursor by introducing bulky organic groups and specific Si3N geometry. These parameter changes improve step coverage by enhancing vapor deposition uniformity and etching properties through controlled reactivity, achieving better manufacturing precision without significantly increasing process complexity
3Reliability
If existing silicon precursors are used, then deposition can proceed, but physical and electrical properties of the thin-film are suboptimal
Solution Approach 1:
The invention designs composite silicon-nitrogen-organic molecular structures with Si3N trigonal planar configuration. This composite structure enables precise control over film composition and crystallinity, producing thin-films with superior electrical properties (mobility, threshold voltage) while maintaining manageable material structure through systematic molecular design
4Length of stationary object
If silicon precursors are used for ultra-fine thin-film formation, then thinness is achieved, but uniformity and electrical properties deteriorate
Solution Approach 1:
The patent optimizes molecular parameters of the silicon precursor including bond lengths, angles, and steric configuration of the Si3N group. These parameter changes enable uniform decomposition and deposition even at ultra-thin dimensions, maintaining excellent uniformity and electrical properties throughout the film thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The novel amino-silyl amine compound enables the production of silicon-containing thin-films with high purity and excellent physical and electrical properties, maintaining a liquid state at room temperature for easy handling and deposition, while providing high thermal stability and reactivity, thus addressing the limitations of existing silicon precursors.
Implementation Method 1
metal organic chemical vapor deposition (MOCVD) forming a film on a surface of a substrate by reacting a silicon precursor in a mixed gas form and a reactive gas
Implementation Method 2
atomic layer deposition (ALD) forming a film by physical or chemical adsorption of a silicon precursor in a gas form on a surface of a substrate
Implementation Method 3
plasma enhanced chemical vapor deposition (PECVD), plasma enhanced atomic layer deposition (PEALD) using plasma capable of being deposited at a low temperature
Data Source
AI summary
Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.